2SA1163-BL,LF(T

2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications Unit: mm  AEC-Q101 Qualified (Note1).  High voltage: VCEO = −120 V  Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)  High hFE: hFE = 200 to 700  Low noise: NF = 1 dB (typ.), 10 dB (max)  Complementary to 2SC2713  Small package Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA JEITA SC-59 Base current IB −20 mA TOSHIBA 2-3F1A PC (Note 2, 4) 200 PC (Note 3) 150 mW Weight: 0.012 g (typ.) Collector power dissipation Junction temperature Storage temperature range Tj (Note 2) 150 Tj (Note 3) 125 Tstg (Note 2) −55 to 150 Tstg (Note 3) −55 to 125 JEDEC TO-236MOD °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. Note 4: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.8 mm2 × 3) Start of commercial production 1982-12 © 2020-2022 Toshiba Electronic Devices & Storage Corporation 1 2022-03-02 2SA1163 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −120 V, IE = 0 A   −0.1 µA Emitter cut-off current IEBO VEB = −5 V, IC = 0 A   −0.1 µA DC current gain hFE VCE = −6 V, IC = −2 mA (Note) 200  700  Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure VCE (sat) IC = −10 mA, IB = −1 mA   −0.3 V fT VCE = −6 V, IC = −1 mA  100  MHz Cob VCB = −10 V, IE = 0 A, f = 1 MHz  4  pF NF VCE = −6 V, IC = −0.1 mA, f = 1 kHz, Rg = 10 kΩ,  1.0 10 dB Note: hFE classification GR (G): 200 to 400, BL (L): 350 to 700 ( ) marking symbol Marking © 2020-2022 Toshiba Electronic Devices & Storage Corporation 2 2022-03-02 2SA1163 Characteristics Curves COMMON EMITTER VCE = −6 V, f = 270 Hz Ta = 25°C © 2020-2022 Toshiba Electronic Devices & Storage Corporation 3 2022-03-02 2SA1163 hoe (× µS) © 2020-2022 Toshiba Electronic Devices & Storage Corporation 4 2022-03-02 2SA1163 (Note) COLLECTOR POWER DISSIPATION Pc (mW) Pc - Ta (Note) 300 250 Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.8 mm2 × 3) 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta (℃) Note: Reference only with Tj of 150 ℃. Note: Reference only with Tj of 125 ℃. The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2020-2022 Toshiba Electronic Devices & Storage Corporation 5 2022-03-02 2SA1163 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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