2SA1892

2SA1892 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1892 Power Amplifier Applications Power Switching Applications Unit: mm • • • • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A, IB = −0.05 A) High collector power dissipation: PC = 1.3 W High-speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC5029 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −50 −50 −5 −3 −0.2 1.3 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-8M1A Weight: 0.55 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1892 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time VCE (sat) VBE (sat) fT Cob ton 20 μ s Switching time Storage time tstg Input IB2 Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.5 A VCE = −2 V, IB = −1.5 A IC = −1 A, IB = −0.05 A IC = −1 A, IB = −0.05 A VCE = −2 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Output 30 Ω Min ― ― −50 70 40 ― ― ― ― ― Typ. ― ― ― ― ― ― ― 100 40 0.1 Max −1.0 −1.0 ― 240 ― −0.5 −1.2 ― ― ― V V MHz pF Unit μA μA V IB2 IB1 IB1 ― 1.0 ― μs VCC = −30 V Fall time tf −IB1 = IB2 = 0.05 A, duty cycle ≤ 1% ― 0.1 ― Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking A1892 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SA1892 VCE – IC VCE (V) Ta = 25°C IB = −5 mA −10 −0.6 −20 −40 −80 VCE – IC VCE (V) Common emitter −1.0 −20 −30 −40 −60 Common emitter Ta = 100°C −80 −120 −0.6 −160 −180 −0.4 −200 −1.0 −0.8 −0.8 IB = −5 mA Collector-emitter voltage −120 −160 −0.4 −200 −0.2 Collector-emitter voltage −0.2 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 Collector current IC (A) Collector current IC (A) VCE – IC −1.0 Common emitter 1000 500 hFE – IC Common emitter VCE (V) −0.8 DC current gain hFE IB = −10 mA −20 −30 −40 Ta = −55°C −60 −80 VCE = −2 V Ta = 100°C 25 300 Collector-emitter voltage −0.6 −120 −160 100 −55 50 30 −0.4 −200 −0.2 ) 10 −0.005 −0.01 −0.03 −0.1 −0.3 −1 −3 0 0 Collector current IC −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 (A) Collector current IC (A) VCE (sat) – IC −1 −10 VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Common emitter −5 −3 IC/IB = 20 Collector-emitter saturation voltage VCE (sat) (V) Common emitter −0.5 −0.3 IC/IB = 20 −0.1 −0.05 −0.03 Ta = 100°C 25 −55 −1 −0.5 −0.3 Ta = −55°C 100 25 −0.01 −0.005 −0.01 −0.03 −0.1 −0.3 −1 −3 −0.1 −0.005 −0.01 −0.03 −0.1 −0.3 −1 −3 Collector current IC (A) Collector current IC (A) 3 2006-11-09 2SA1892 IC – VBE −2.0 Common emitter VCE = −2 V (A) Collector current IC −1.5 −1.0 Ta = 100°C 25 −55 −0.5 0 0 −0.4 −0.8 −1.2 −1.6 Base-emitter voltage VBE (V) rth – tw 300 Curves should be applied in thermal limited area. (Single nonrepetitive pulse) Ta = 25°C 100 Transient thermal resistance rth (°C/W) 30 10 3 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area −10 IC max (pulsed)* −5 −3 IC max (continuous) 100 ms* −1 −0.5 −0.3 DC operation Ta = 25°C 10 ms* 1 m s* 1.6 PC – Ta (W) PC Collector power dissipation VCEO max −10 −30 −100 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Collector current IC (A) −0.1 −0.05 −0.03 −0.02 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature −0.3 −1 −3 25 50 75 100 125 150 175 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 4 2006-11-09 2SA1892 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-09