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2SA1924_06

2SA1924_06

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    2SA1924_06 - High-Voltage Switching Applications - Toshiba Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
2SA1924_06 数据手册
2SA1924 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications Unit: mm • • • High breakdown voltage: VCEO = −400 V Low saturation voltage: VCE (sat) = −1 V (max) (IC = −100 mA, IB = −10 mA) Collector metal (fin) is fully covered with mold resin. Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −400 −400 −7 −0.5 −1 −0.25 1.5 10 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-8H1A Weight: 0.82 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1924 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO VCEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton 20 μ s IB2 Switching time Test Condition VCB = −400 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −20 mA VCE = −5 V, IC = −100 mA IC = −100 mA, IB = −10 mA IC = −100 mA, IB = −10 mA VCE = −5 V, IC = −50 mA VCB = −10 V, IE = 0, f = 1 MHz Input Output 20 kΩ Min ― ― −400 140 140 ― ― ― ― ― Typ. ― ― ― ― ― −0.4 −0.76 35 18 0.2 Max −10 −1 ― 450 400 −1.0 −0.9 ― ― ― V V MHz pF Unit μA μA V IB1 IB2 IB1 Storage time tstg ― 2.3 ― μs VCC = −200 V Fall time tf IB1 = −10 mA, IB2 = 20 mA, duty cycle ≤ 1% ― 0.2 ― Marking Lot No. A1924 A line indicates lead (Pb)-free finish. Part No. (or abbreviation code) 2 2006-11-09 2SA1924 IC – VCE −500 −100 −400 −80 −60 −40 −20 −10 −5 −2 −400 −500 Common emitter VCE = −5 V IC – VBE (mA) Collector current IC Collector current IC (mA) −300 −1 −200 IB = −0.5 mA −100 Common emitter Ta = 25°C 0 0 −2 −4 −6 −8 −10 −12 −14 −16 −18 −20 −300 −200 Tc = 100°C 25 −55 −100 0 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 Collector-emitter voltage VCE (V) Collector-emitter voltage VBE (V) hFE – IC 1000 100 25 100 50 30 Tc = −55°C −30 Common emitter VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) 500 −10 −5 −3 IC/IB = 10 DC current gain hFE −1 −0.5 −0.3 100 −0.1 −0.05 Tc = −55°C 25 10 Common emitter 5 3 −1 VCE = −5 V −10 −100 −1000 −0.03 −1 −10 −100 −1000 Collector current IC (mA) Collector current IC (mA) Safe Operating Area −3000 100 μs* −1000 IC max (pulsed)* IC max (continuous) 300 μs* 10 μs* (mA) VBE (sat) – IC −10 −300 DC operation Tc = 25°C 10 ms* 1 ms* Base-emitter saturation voltage VBE (sat) (V) Common emitter −5 −3 IC/IB = 10 Collector current IC −100 −30 −1 −0.5 −0.3 −55 −10 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −3 −10 −30 Tc = 100°C 25 −3 VCEO max −100 −300 −1000 −0.1 −1 −10 −100 −500 −1 −1 Collector current IC (mA) Collector-emitter voltage VCE (V) 3 2006-11-09 2SA1924 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2006-11-09
2SA1924_06
PDF文档中包含的物料型号为:MAX31855。

器件简介:MAX31855是一款冷结补偿的逐次逼近寄存器(SAR)ADC,专为K型热电偶温度测量而设计。

引脚分配:MAX31855有8个引脚,包括V+、GND、SCK、CS、SO、DOUT、DGND和FLT。

参数特性:工作温度范围为-40°C至+125°C,供电电压范围为2.0V至5.5V,转换速率为16次/秒。

功能详解:MAX31855能够将热电偶的毫伏信号转换为数字信号,内置冷结补偿,无需外部补偿电路。

应用信息:适用于高精度温度测量场合,如工业过程控制、医疗设备等。

封装信息:MAX31855采用SOIC-8封装。
2SA1924_06 价格&库存

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