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2SA1943_04

2SA1943_04

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    2SA1943_04 - Power Amplifier Applications - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
2SA1943_04 数据手册
2SA1943 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications Unit: mm • • • High collector voltage: VCEO = −230 V (min) Complementary to 2SC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −230 −230 −5 −15 −1.5 150 150 −55 to 150 Unit V V V A A W JEDEC °C °C ― ― 2-21F1A JEITA TOSHIBA Weight: 9.75 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = −230 V, IE = 0 VEB = −5 V, IC = 0 IC = −50 mA, IB = 0 VCE = −5 V, IC = −1 A VCE = −5 V, IC = −7 A IC = −8 A, IB = −0.8 A VCE = −5 V, IC = −7 A VCE = −5 V, IC = −1 A VCB = −10 V, IE = 0, f = 1 MHz Min ― ― −230 55 35 ― ― ― ― Typ. ― ― ― ― 60 −1.5 −1.0 30 360 Max −5.0 −5.0 ― 160 ― −3.0 −1.5 ― ― V V MHz pF Unit µA µA V Note: hFE (1) classification R: 55 to 110, O: 80 to 160 1 2004-07-07 2SA1943 Marking Part No. (or abbreviation code) TOSHIBA 2SA1943 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SA1943 IC – VCE −20 Common emitter Tc = 25°C −20 Common emitter VCE = −5 V IC – VBE IC (A) −12 −250 IC (A) −100 −16 −800 −600 −400 −200 −16 −12 Collector current −150 −8 IB = −10 mA −4 Collector current −8 −50 −40 −30 −20 −4 Tc = 100°C 25 −25 0 0 −2 −4 −6 −8 −10 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) hFE −3 −1 −0.3 Tc = 100°C −0.1 25 Common emitter IC/IB = 10 −0.001 −0.01 −0.1 −1 −10 −100 −25 300 100 30 10 3 −0.01 Tc = 100°C 25 −25 Common emitter VCE = −5 V −0.1 hFE – IC DC current gain −1 −10 −100 Collector current IC (A) Collector current IC (A) Safe Operating Area −50 −30 IC max (pulsed)* IC max (continuous) −10 1 ms* 10 ms* 100 ms* IC (A) −5 −3 DC operation Tc = 25°C −1 −0.5 −0.3 *: Single nonrepetitive pulse Tc = 25°C −0.1 Curves must be derated linearly with increase in −0.05 temperature. −0.03 −2 −10 −30 Collector current VCEO max −100 −300 −1000 Collector-emitter voltage VCE (V) 3 2004-07-07 2SA1943 rth – tw 10 rth (°C/W) Transient thermal resistance 1 Infinite heat sink 0.1 Curves should be applied in thermal limited area. (single nonrepetitive pulse) 0.01 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) 4 2004-07-07 2SA1943 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07
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