2SA2058_06

2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • • • High DC current gain: hFE = 200 to 500 (IC = −0.2 A) Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating −20 −10 −7 −1.5 −2.5 −150 500 750 150 −55 to 150 Unit V V V A mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-3S1C Weight: 0.01 g (typ.) Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA2058 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = −20 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.2 A VCE = −2 V, IC = −0.6 A IC = −0.6 A, IB = −20 mA IC = −0.6 A, IB = −20 mA VCB = −10 V, IE = 0, f = 1 MHz See Figure 1 circuit diagram. VCC ∼ −6 V, RL = 10 Ω − −IB1 = IB2 = −20 mA Min ⎯ ⎯ −10 200 125 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 12 50 115 25 Max −100 −100 ⎯ 500 ⎯ −0.19 −1.10 ⎯ ⎯ ⎯ ⎯ ns V V pF Unit nA nA V Marking 20 μs IB2 IB1 Input IB1 VCC Part No. (or abbreviation code) Output W Lot code (year) Dot: even year No dot: odd year M Lot code (month) IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart RL 2 2006-11-09 2SA2058 IC – VCE −2.4 −80 −60 −40 Common emitter Ta = 25°C Single nonrepetitive pulse −20 10000 Common emitter VCE = −2 V Single nonrepetitive pulse hFE – IC −2.0 (A) DC current gain hFE Collector current IC −1.6 1000 25 Ta = 100°C −1.2 −10 −8 −6 −4 IB = −2 mA −55 100 −0.8 −0.4 10 −0.001 0 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −0.01 −0.1 −1 Collector-emitter voltage VCE (V) Collector current IC (A) VCE (sat) – IC −1 Common emitter Single nonrepetitive pulse −0.1 Ta = 100°C 25 −0.01 −10 Common emitter IC/IB = 30 IC/IB = 30 VBE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Base-emitter saturation voltage VBE (sat) (V) Single nonrepetitive pulse −1 −55 Ta = 100°C 25 −0.1 −55 −0.001 −0.001 −0.01 −0.1 −1 −0.01 −0.001 −0.01 −0.1 −1 Collector current IC (A) Collector current IC (A) IC – VBE −2.0 Common emitter VCE = −2 V −1.6 Single nonrepetitive pulse −1.2 Collector current IC (A) −0.8 Ta = 100°C −0.4 25 −55 0 0 −0.4 −0.8 −1.2 −1.6 Base-emitter voltage VBE (V) 3 2006-11-09 2SA2058 rth – tw 1000 Transient thermal resistance rth (°C/W) 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse area: 645 mm2) 1 0.001 0.01 0.1 1 10 100 1000 Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu Pulse width tw (s) Safe Operating Area −10 IC max (pulsed) ♦ 10 ms♦ 1 ms♦ (A) IC max (continuous) −1 DC operation * (Ta = 25°C) ♦: Single nonrepetitive pulse Ta = 25°C −0.1 Note that the curves for 100 ms*, 10 s* and DC operation* will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. −0.01 −0.1 −1 100 ms♦* 10 s♦* Collector current IC −10 VCEO max −100 Collector-emitter voltage VCE (V) 4 2006-11-09 2SA2058 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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