2SA2069_06

2SA2069 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications DC-DC Converter Applications • • • High DC current gain: hFE = 200 to 500 (IC = −0.15 A) Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max) High-speed switching: tf = 37 ns (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range t = 10 s DC DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating −20 −20 −7 −1.5 −2.5 −150 2.0 1.0 150 −55 to 150 Unit V V V A mA W °C °C JEDEC JEITA TOSHIBA ― SC-62 2-5K1A Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu 2 area: 645 mm ) Weight: 0.05 g (typ.) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA2069 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = −20 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.15 A VCE = −2 V, IC = −0.5 A IC = −0.5 A, IB = −17 mA IC = −0.5 A, IB = −17 mA VCB = −10 V, IE = 0, f = 1 MHz See Figure 1. VCC ≈ −10 V, RL = 20 Ω −IB1 = IB2 = −17 mA Min ― ― −20 200 125 ― ― ― ― ― ― Typ. ― ― ― ― ― ― ― 12 40 135 37 Max −100 −100 ― 500 ― −0.14 −1.10 ― ― ― ― ns V V pF Unit nA nA V Marking 20 μs IB2 IB1 Input IB1 VCC Part No. (or abbreviation code) Output 4 Lot No. D A line indicates lead (Pb)-free package or lead (Pb)-free finish. IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart RL 2 2006-11-09 2SA2069 IC – VCE −1.6 Common emitter Ta = 25°C Single nonrepetitive pulse 1000 −30 −20 −15 −10 −8 −0.8 −6 −4 −0.4 IB = −2 mA hFE – IC Ta = 100°C −1.2 DC current gain hFE (A) 100 25 Collector current IC −55 10 Common emitter VCE = −2 V Single nonrepetitive pulse 1 −0.001 −0.01 −0.1 −1 −10 0 0 −0.2 −0.4 −0.6 −0.8 Collector current IC (A) Collector-emitter voltage VCE (V) VCE (sat) – IC −1 VBE (sat) – IC −10 Collector-emitter saturation voltage VCE (sat) (V) −0.1 Ta = 100°C 25 −0.01 −55 Base-emitter saturation voltage VBE (sat) (V) Common emitter IC/IB = 30 Single nonrepetitive pulse Common emitter IC/IB = 30 Single nonrepetitive pulse −55 25 −1 Ta = 100°C −0.001 −0.001 −0.01 −0.1 −1 −10 −0.1 −0.001 −0.01 −0.1 −1 −10 Collector current IC (A) Collector current IC (A) IC – VBE −1.5 Common emitter VCE = −2 V Single nonrepetitive −1.2 pulse Collector current IC (A) −0.9 −0.6 Ta = 100°C −0.3 25 0 0 −55 −0.3 −0.6 −0.9 −1.2 −1.5 Base-emitter voltage VBE (V) 3 2006-11-09 2SA2069 rth – tw 1000 Transient thermal resistance rth (°C/W) 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse area: 645 mm2) 1 0.001 0.01 0.1 1 10 100 1000 Ta = 25°C Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu Pulse width tw (s) Safe Operating Area −10 IC max (pulsed) ♦ 10 ms♦ 1 ms♦ 100 μs♦ (A) IC max (continuous) 100 ms♦* −1 10 s♦* DC operation * (Ta = 25°C) ♦: Single nonrepetitive pulse Ta = 25°C −0.1 Note that the curves for 100 ms*, 10 s* and DC operation* will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. −0.01 −0.1 −1 Collector current IC −10 VCEO max −100 Collector-emitter voltage VCE (V) 4 2006-11-09 2SA2069 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-09