2SA2154CT-Y(TPL3)

2SA2154CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA2154CT General Purpose Amplifier Applications • High voltage and high current : VCEO = −50V, IC = −100mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA) / hFE (IC = −2 mA)= 0.95 (typ.) • High hFE • Complementary to 2SC6026CT Unit: mm : hFE = 120 to 400 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC −100 mA Collector current Base current IB −30 mA Collector power dissipation PC 100* mW Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C CST3 * : Mounted on FR4 board (10 mm × 10 mm × 1 mmt) 1.BASE 2.EMITTER 3.COLLECTOR Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-1J1A operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.75 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 A   −0.1 µA Emitter cut-off current IEBO VEB = −5 V, IC = 0 A   −0.1 µA 120  400  DC current gain hFE (Note) Collector-emitter saturation voltage Transition frequency fT Collector output capacitance Note: hFE classification ( VCE (sat) Cob VCE = −6 V, IC = −2 mA IC = −100 mA, IB = −10 mA  −0.18 −0.3 V VCE = −10 V, IC = −1 mA 80   MHz VCB = −10 V, IE = 0 A, f = 1 MHz  1.6  pF Y (F): 120 to 240, GR (H): 200 to 400 ) marking symbol Marking Type Name hFE Rank 1 8F 3 2 Start of commercial production 2004-08 © 2020 Toshiba Electronic Devices & Storage Corporation 1 2020-04-01 2SA2154CT hFE hFE -–IC IC ICIC- –VCE VCE 1000 -120 COLLECTOR CURRENT IC (mA) Collector current IC (mA) -100 -1.5 DC GAIN DCCURRENT current gain hFEhFE COMMON EMITTER　 Ta=25℃ Common emitter Ta = 25°C -2.0 -1.0 -80 -0.7 -60 -0.5 -40 -0.3 -0.2 Ta = 100℃ 100 -25 COMMON EMITTER Common emitter 　 　 　VVCE=−6V CE = −6 V CE = −1 V 　 　 　VVCE=−1V -20 −0.1 mA IBIB== -0.1mA -00 -00 -1 -2 -3 -4 -5 -6 10 -0.1 -7 -1 Collector-emitter voltage VCE VCE (V) (V) COLLECTOR-EMITTER VOLTAGE VCE (sat) –- IIC VCE(sat) C VBE (sat)- –ICIC VBE(sat) Common emitter COMMON EMITTER IIC/IB=10 C/IB = 10 Base-emitter saturation voltage BASE-EMITTER SATURATION VBE VBE(sat) (sat) (V) (V) VOLTAGE COLLECTOR-EMITTER SATURATION Collector-emitter saturation voltage VCE (sat) (V) (V) VOLTAGE VCE(sat) -100 -10 -0.1 Ta = 100℃ 25 -25 -0.01 -0.1 -1 -10 Collector current IC (mA) COLLECTOR CURRENT IC (mA) Common emitter COMMON EMITTER IC/IB = 10 IC/IB=10 -1 -0.1 -0.1 -100 -1 -10 Collector current I C (mA) COLLECTOR CURRENT IC (mA) IB-VBE – VBE IB COLLECTOR DISSIPATION (mV) CollectorPOWER power dissipation PC PC (mV) -100 Ta = 100℃ -10 -25 25 -1 Common COMMONemitter EMITTER VCE = −6 V VCE=−6V -0.1 -0.2 -0.4 -0.6 -100 PPCTa C* –Ta -1000 Base CURREMT current IB 　I(µA) BASE B (υA) -10 Collector current IC (mA) COLLECTOR CURRENT IC (mA) -1 -00 25 -0.8 -1 -1.2 -1.4 Base-emitter voltage VBE (V) BASE-EMITTER VOLTAGE VBE (V) 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 Mounted on FR4 board 　　　　　(10 mm × 10 mm × 1 mmt) 0 20 40 60 80 100 120 140 160 Ambient temperature Ta Ta (°C)(°C) AMBIENT TEMPERATURE * total rating The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2020 Toshiba Electronic Devices & Storage Corporation 2 2020-04-01 2SA2154CT RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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