2SA2154MFV

2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154MFV General-Purpose Amplifier Applications • High voltage and high current : VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 0.22 ± 0.05 Unit: mm 1.2 ± 0.05 0.8 ± 0.05 1 1.2 ± 0.05 0.4 • Complementary to 2SC6026MFV • Lead (Pb) - free 0.4 1 3 2 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −50 −50 −5 −150 −30 150* 150 −55~150 Unit V V V mA mA mW °C °C 0.5 ± 0.05 VESM JEDEC JEITA TOSHIBA 1.BASE 2.EMITTER 3.COLLECTOR ― ― 2-1L1A Weight: 0.0015 g (typ.) * : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mm) Mount Pad Dimensions (Reference) 0.5 0.45 1.15 0.4 0.45 0.4 0.4 Unit: mm 1 2005-07-14 0.13 ± 0.05 0.32 ± 0.05 0.80 ± 0.05 2SA2154MFV Electrical Characteristics (Ta = 25°C) Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 VCE = −6 V, IC = −2 mA IC = −100 mA, IB = −10 mA VCE = −10 V, IC = −1 mA VCB = −10 V, IE = 0, f = 1 MHz Min ⎯ ⎯ 120 ⎯ 80 ⎯ Typ. ⎯ ⎯ ⎯ −0.18 ⎯ 1.6 Max −0.1 −0.1 400 −0.3 ⎯ ⎯ Unit µA µA ⎯ V MHz pF Note: hFE classification Y (Y): 120~240, GR (G): 200~400 ( ) marking symbol Marking Type Name hFE Classification PY 2 2005-07-14 2SA2154MFV IC - VCE -120 -2.0 -100 COLLECTOR CURRENT IC (mA) hFE - IC 1000 COMMON EMITTER　Ta = 25°C DC CURRENT GAIN hFE -1.5 -1.0 -0.7 -0.5 -0.3 -0.2 Ta = 100°C 25 -80 -60 -40 -20 100 -25 IB = -0.1mA 0 -0 0 -0 -1 -2 -3 -4 -5 -6 -7 COLLECTOR-EMITTER VOLTAGE VCE (V) VCE(sat) - IC -1 -10 COMMON EMITTER IC/IB = 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER 　　　 VCE = −6V 　　　 VCE = −1V 10 -0.1 -1 -10 -100 COLLECTOR CURRENT IC (mA) VBE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COMMON EMITTER IC/IB = 10 -0.1 Ta = 100°C -1 -25 25 -25 -0.01 -0.1 25 Ta = 100°C -1 -10 -100 -0.1 -0.1 -1 -10 -100 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) IB - VBE -1000 COLLECTOR POWER DISSIPATION PC (mV) PC - Ta 250 Mounted on FR4 board 　　　　　(25.4 mm × 25.4 mm × 1.6 mmt) 200 BASE CURRENT 　IB (uA) -100 Ta = 100°C -10 -25 150 25 100 -1 COMMON EMITTER VCE = −6V -0.1 0 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 BASE-EMITTER VOLTAGE VBE (V) 50 0 0 50 100 150 200 AMBIENT TEMPERATURE Ta (°C) 3 2005-07-14 2SA2154MFV 4 2005-07-14