2SB1018A

2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • • • High collector current: IC = −7 A Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A) Complementary to 2SD1411A Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −100 −80 −5 −7 −1 2.0 30 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-21 2SB1018A Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time VCE (sat) VBE (sat) fT Cob ton 20 μ s Switching time Storage time tstg Input IB2 Test Condition VCB = −100 V, IE = 0 VEB = −5 V, IC = 0 IC = −50 mA, IB = 0 VCE = −1 V, IC = −1 A VCE = −1 V, IC = −4 A IC = −4 A, IB = −0.4 A IC = −4 A, IB = −0.4 A VCE = −4 V, IC = −1 A VCB = −10 V, IE = 0, f = 1 MHz Output 10 Ω Min ― ― −80 70 30 ― ― ― ― ― Typ. ― ― ― ― ― −0.3 −0.9 10 250 0.4 Max −5 −5 ― 240 ― −0.5 −1.4 ― ― ― V MHz pF Unit μA μA V IB2 IB1 IB1 ― 2.5 ― μs VCC = −30 V Fall time tf −IB1 = IB2 = 0.3 A, duty cycle ≤ 1% ― 0.5 ― Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking B1018A Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 2SB1018A IC – VCE −10 Common emitter −180 Tc = 25°C −1.2 VCE – IC Common emitter Tc = 25°C VCE (V) (A) −8 −200 −6 −160 −140 −120 −100 −80 −4 −60 −40 −2 IB = −20 mA −1.0 IB = −20 mA −40 −0.6 −100 Collector current IC −0.8 Collector-emitter voltage −200 −0.4 −700 −0.2 −300 −400 −500 −600 0 0 0 −2 −4 −6 −8 −10 0 0 −1 −2 −3 −4 −5 −6 −7 Collector-emitter voltage VCE (V) Collector current IC (A) IC – VCE −1.2 Common emitter −1.2 Tc = 100°C −1.0 VCE – IC Common emitter Tc = −55°C −1.0 IB = −20 mA −100 −0.6 −150 −300 VCE (V) −0.8 IB = −20 mA −0.6 VCE (V) −300 −400 −500 −600 Collector-emitter voltage −0.4 −700 −0.2 Collector-emitter voltage −40 −100 −200 −0.8 −0.4 −0.2 −700 −200 −400 −500 −600 ) 0 0 −1 −2 −3 −4 −5 −6 −7 0 0 −1 −2 −3 −4 −5 −6 −7 Collector current IC (A) Collector current IC (A) hFE – IC 1000 Common emitter 500 VCE = −1 V Tc = 100°C 25 100 −55 50 30 −1 VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter −0.5 −0.3 IC/IB = 10 DC current gain hFE 300 −0.1 Tc = 100°C −0.05 −0.03 25 −55 10 −0.03 −0.1 −0.3 −1 −3 −10 −0.01 −0.03 −0.1 −0.3 −1 −3 −10 Collector current IC (A) Collector current IC (A) 3 2006-11-21 2SB1018A VBE (sat) – IC −10 IC – VBE Common emitter Tc = 100°C −6 Common emitter VCE = −1 V Base-emitter saturation voltage VBE (sat) (V) −5 −3 IC/IB = 10 Collector current IC (A) −1 −0.5 −0.3 Tc = −55°C −55 −4 25 100 25 −2 −0.1 −0.03 −0.1 −0.3 −1 −3 −10 0 0 Collector current IC (A) −0.8 −1.6 −2.4 −3.2 Base-emitter voltage VBE (V) rth – tw 100 Transient thermal resistance rth (°C/W) Curves apply only to limited areas of thermal resistance. (single nonrepetitive pulse) (1) 10 (2) Infinite heat sink No heat sink (2) (1) 1 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area −20 −10 IC max (pulsed)* 1 m s* IC max (continuous) DC operation Tc = 25°C −1 −0.5 −0.3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −0.1 −1 −3 −10 10 ms* 100 ms* (A) Collector current IC −5 −3 VCEO max −30 −100 Collector-emitter voltage VCE (V) 4 2006-11-21 2SB1018A RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-21