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2SB1067

2SB1067

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    2SB1067 - Silicon PNP Epitaxial Type (Darlington Power Transistor) - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
2SB1067 数据手册
2SB1067 TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor) 2SB1067 Micro-Moter Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Industrial Applications Unit: mm • • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A, IB = −1 mA) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −80 −80 −8 −2 −0.5 1.5 10 150 −55 to 150 Unit V V V A A JEDEC W °C °C ― ― 2-8H1A JEITA TOSHIBA Weight: 0.82 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit COLLECTOR BASE ≈ 4 kΩ ≈ 800 Ω EMITTER 1 2006-11-21 2SB1067 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitte breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob ton Test Condition VCB = −80 V, IE = 0 VEB = −8 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −1 A IC = −1 A, IB = −1 mA IC = −1 A, IB = −1 mA VCE = −2 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Input IB2 IB2 IB1 Output 30 Ω Min ― ― −80 2000 ― ― ― ― ― Typ. ― ― ― ― ― ― 50 30 0.4 Max −10 −4 ― ― −1.5 −2.0 ― ― ― V V MHz pF Unit μA mA V 20 μ s IB1 Switching time Storage time tstg ― 2.0 ― μs VCC = −30 V Fall time tf −IB1 = IB2 = 1 mA, duty cycle ≤ 1% ― 0.4 ― Marking Lot No. B1067 A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) 2 2006-11-21 2SB1067 IC – VCE −1000 −800 −1.6 −600 −500 10000 Common emitter Tc = 25°C 5000 3000 Common emitter VCE = −2 V hFE – IC (A) Collector current IC DC current gain hFE −400 1000 500 300 Tc = 100°C 25 −55 −300 −0.8 IB = −200 μA 100 50 0 0 −2 −4 −6 −8 30 −0.01 −0.03 −0.1 −0.3 −1 −3 Collector-emitter voltage VCE (V) Collector current IC (A) Collector-emitter saturation voltage VCE (sat) (V) −3 Base-emitter saturation voltage VBE (sat) (V) VCE (sat) – IC Common emitter IC/IB = 1000 VBE (sat) – IC −5 Common emitter IC/IB = 1000 −3 Tc = −55°C 25 100 −1 −0.3 −1 −3 Tc = −55°C −1 25 100 −0.5 −0.3 −1 −3 Collector current IC (A) Collector current IC (A) IC – VBE Common emitter VCE = −2 V −1.6 PC – Ta (W) (1) Tc = Ta Infinite heat sink (2) No heat sink (1) 12 Collector power dissipation PC Collector current IC (A) 8 Tc = 100°C −0.8 25 −55 4 (2) 0 0 −0.8 −1.6 −2.4 −3.2 0 0 40 80 120 160 200 240 Base-emitter voltage VBE (V) Ambient temperature Ta (°C) 3 2006-11-21 2SB1067 Safe Operating Area −5 −3 IC max (pulsed)* IC max (continuous) 100 μs* 1 m s* 10 ms* (A) Collector current IC −1 −0.5 −0.3 DC operation Tc = 25°C −0.1 *: Single nonrepetitive pulse Tc = 25°C −0.05 Curves must be derated linearly with increase in temperature. −0.02 −1 −3 −10 VCEO max −30 −100 Collector-emitter voltage VCE (V) 4 2006-11-21 2SB1067 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-21
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