2SC2235

2SC2235 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2235 Audio Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm • Complementary to 2SA965. Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 800 80 900 150 −55 to 150 Unit V V V mA mA mW °C °C JEDEC TO-92MOD Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in TOSHIBA 2-5J1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.36 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SC2235 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO V (BR) EBO hFE (Note) VCE (sat) VBE fT Cob Test Condition VCB = 120 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 IE = 1 mA, IC = 0 VCE = 5 V, IC = 100 mA IC = 500 mA, IB = 50 mA VCE = 5 V, IC = 500 mA VCE = 5 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 120 5 80 ― ― ― ― Typ. ― ― ― ― ― ― ― 120 ― Max 100 100 ― ― 240 1.0 1.0 ― 30 V V MHz pF Unit nA nA V V Note: hFE classification O: 80 to 160, Y: 120 to 240 Marking C2235 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SC2235 IC – VCE 1000 Common emitter Ta = 25°C 500 800 15 1000 hFE – IC Common emitter VCE = 5 V Ta = 100°C 100 50 30 25 −25 (mA) 10 7 5 4 Collector current IC 600 400 3 2 200 IB = 1 mA 0 2 4 6 8 10 12 14 10 3 10 30 100 300 1000 0 0 DC current gain hFE 300 Collector current IC (mA) Collector-emitter voltage VCE (V) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) 0.5 0.3 Common emitter IC/IB = 10 800 Common emitter IC – VBE (mA) VCE = 5 V 600 0.1 0.05 0.03 Ta = 100°C 25 −25 Collector current IC 400 Ta = 100°C 25 −25 0.01 3 10 30 100 300 1000 200 Collector current IC (mA) 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) Safe Operating Area 3000 IC max (pulsed)* 1000 IC max (continuous) 1 ms* 1000 10 ms* DC operation 100 ms* PC – Ta (mW) Collector power dissipation PC 600 400 200 (mA) 500 300 800 Collector current IC 100 50 30 10 5 3 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 1 0.5 1 3 5 10 30 50 100 300 500 1000 0 0 20 40 60 80 100 120 140 160 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 3 2006-11-09 2SC2235 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2006-11-09