2SC2873_04

2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Power Switching Applications • • • • • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time: tstg = 1.0 µs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1213 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB PC Collector power dissipation PC (Note 1) Junction temperature Storage temperature range Tj Tstg Rating 50 50 5 2 0.4 500 1000 150 −55 to 150 2 Unit V V V A A JEDEC mW ― SC-62 2-5K1A JEITA TOSHIBA °C °C Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm × 0.8 t) 1 2004-07-07 2SC2873 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note 2) hFE (2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time VCE (sat) VBE (sat) fT Cob ton Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 2.0 A IC = 1 A, IB = 0.05 A IC = 1 A, IB = 0.05 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz OUTPUT 30 Ω Min ― ― 50 70 20 ― ― ― ― ― Typ. ― ― ― ― ― ― ― 120 30 0.1 Max 0.1 0.1 ― 240 ― 0.5 1.2 ― ― ― V V MHz pF Unit µA µA V ― 20 µs INPUT IB1 IB1 IB2 IB2 Switching time Storage time tstg ― 1.0 ― µs Fall time tf IB1 = −IB2 = 0.05 A, DUTY CYCLE ≤ 1% ― 0.1 ― Note 2: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking Part No. (or abbreviation code) M Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC2873 VCE – IC 1.6 1.6 VCE – IC (V) Common emitter Ta = 25°C 1.2 (V) Common emitter Ta = 100°C 1.2 VCE Collector-emitter voltage Collector-emitter voltage VCE 0.8 IB = 5 mA 10 20 0.8 IB = 3 mA 5 10 20 0.4 0.4 30 30 40 0 0 40 50 0 0 2.0 0.4 0.8 1.2 1.6 2.0 Collector current IC 0.4 0.8 1.2 (A) 1.6 Collector current IC (A) VCE – IC 1.6 1000 Common emitter Ta = −55°C 1.2 hFE – IC Common emitter 500 VCE = 2 V Ta = 100°C (V) VCE Collector-emitter voltage DC current gain hFE 300 100 50 30 25 −55 0.8 IB = 5 mA 10 20 30 0.4 40 50 10 10 2.0 30 100 300 1000 3000 0 0 0.4 0.8 1.2 1.6 Collector current IC (mA) Collector current IC (A) VCE (sat) – IC 1 10 Common emitter VBE (sat) – IC Common emitter IC/IB = 20 IC/IB = 20 Collector-emitter saturation voltage VCE (sat) (V) Base-emitter saturation voltage VBE (sat) (V) 0.5 0.3 5 3 0.1 0.05 0.03 Ta = 100°C 1 0.5 0.3 Ta = −55°C 25 100 25 −55 0.01 10 30 100 300 1000 3000 0.1 10 30 100 300 1000 3000 Collector current IC (mA) Collector current IC (mA) 3 2004-07-07 2SC2873 IC – VBE 2.0 Common emitter VCE = 2 V 5000 3000 Safe Operating Area IC max (pulse)* IC max (continuous) 100 ms * 1 S* 500 300 DC operation Ta = 25°C 100 50 30 *: Single no repetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature Tested without a substrate 5 0.1 0.3 1 3 VCEO max 10 30 100 1 ms* 10 ms* IC (A) 1.0 0.5 Collector current IC 1.2 1.6 2.0 Collector current Ta = 100°C 25 −55 (mA) 0.4 0.8 1.5 1000 0 0 10 Base-emitter voltage VBE (V) Collector-emitter voltage VCE (V) PC – Ta 1.2 PC (W) 1.0 (1) (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink Collector power dissipation 0.8 0.6 (2) 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2004-07-07 2SC2873 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07