2SC2881

2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Power Amplifier Applications • • • • • High voltage: VCEO = 120 V High transition frequency: fT = 120 MHz (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1201 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB PC Collector power dissipation PC (Note 1) Junction temperature Storage temperature range Tj Tstg Rating 120 120 5 800 160 500 1000 150 −55 to 150 2 Unit V V V mA mA PW-MINI JEDEC ― SC-62 2-5K1A mW JEITA TOSHIBA °C °C Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm × 0.8 t) 1 2004-07-07 2SC2881 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO V (BR) EBO hFE (Note 2) VCE (sat) VBE fT Cob Test Condition VCB = 120 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 IE = 1 mA, IC = 0 VCE = 5 V, IC = 100 mA IC = 500 mA, IB = 50 mA VCE = 5 V, IC = 500 mA VCE = 5 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 120 5 80 ― ― ― ― Typ. ― ― ― ― ― ― ― 120 ― Max 0.1 0.1 ― ― 240 1.0 1.0 ― 30 Unit µA µA V V ― V V MHz pF Note 2: hFE classification O: 80 to 160, Y: 120 to 240 Marking Part No. (or abbreviation code) C Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC2881 IC – VCE 800 50 20 10 Common emitter Ta = 25°C 500 1000 hFE – IC Common emitter VCE = 5 V (mA) hFE 600 5 300 Ta = 100°C 25 100 −25 Collector current IC 400 3 2 DC current gain 12 16 50 30 200 IB = 1 mA 0 0 0 4 8 10 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) Collector current IC (mA) VCE (sat) – IC 1 Common emitter 1.0 IC – VBE Common emitter VCE = 5 V 0.8 IC/IB = 10 Collector-emitter saturation voltage VCE (sat) (V) 0.3 IC (A) 0.6 0.5 Collector current 0.4 Ta = 100°C 25 −25 0.1 Ta = 100°C 25 −25 0.2 0.05 0.03 3 10 30 100 300 1000 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector current IC (mA) Base-emitter voltage VBE (V) Safe Operating Area 3000 IC max (pulse)* 1000 IC max (continuous) 500 10 ms* 100 ms * 1.2 1 ms * PC – Ta PC (W) (1) (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink 0.8 (mA) 300 1.0 Collector current IC 100 DC operation Ta = 25°C 50 30 Collector power dissipation 0.6 (2) 10 5 3 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. 1 3 10 0.4 0.2 VCEO max 30 100 300 0 0 20 40 60 80 100 120 140 160 1 0.3 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 3 2004-07-07 2SC2881 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-07