2SC2883

2SC2883 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2883 Audio Frequency Amplifier Applications • • • • Suitable for output stage of 3 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1203 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB PC Collector power dissipation PC (Note 1) Junction temperature Storage temperature range Tj Tstg Rating 30 30 5 1.5 0.3 500 1000 150 −55 to 150 2 Unit V V V A A mW PW-MINI JEDEC ― SC-62 2-5K1A °C °C JEITA TOSHIBA Note 1: Mounted on a ceramic substrate (250 mm × 0.8 t) Weight: 0.05 g (typ.) 1 2004-07-07 2SC2883 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO V (BR) EBO hFE (Note 2) VCE (sat) VBE fT Cob Test Condition VCB = 30 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 IE = 1 mA, IC = 0 VCE = 2 V, IC = 500 mA IC = 1.5 A, IB = 0.03 A VCE = 2 V, IC = 500 mA VCE = 2 V, IC = 500 mA VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 30 5 100 ― ― ― ― Typ. ― ― ― ― ― ― ― 120 ― Max 0.1 0.1 ― ― 320 2.0 1.0 ― 40 Unit µA µA V V ― V V MHz pF Note 2: hFE classification O: 100 to 200, Y: 160 to 320 Marking Part No. (or abbreviation code) G Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC2883 IC – VCE 1.6 10 1000 8 6 Common emitter Ta = 25°C 500 hFE – IC IC (A) hFE 1.2 5 4 300 Ta = 100°C 25 −25 Collector current DC current gain 0.8 3 2 100 50 30 Common emitter VCE = 2 V 0.4 IB = 1 mA 0 0 0 4 8 12 16 10 1 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) Collector current IC (mA) VCE (sat) – IC 1 Common emitter 1.6 IC/IB = 50 IC – VBE Common emitter VCE = 2 V Collector-emitter saturation voltage VCE (sat) (V) 0.5 0.3 (mA) 1.2 Ta = 100°C 0.8 25 −25 0.1 Ta = 100°C 0.05 0.03 25 −25 Collector current IC 0.4 0.01 1 3 10 30 100 300 1000 0 0 0.4 0.8 1.2 1.6 Collector current IC (mA) Base-emitter voltage VBE (V) Safe Operating Area 5000 3000 IC max (pulse)* IC max (continuous) 10 ms * 100 ms* 1 ms* PC – Ta 1.2 PC (W) (mA) 1000 500 300 1.0 (1) (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink Collector current IC DC operation Ta = 25°C 1 s* Collector power dissipation 0.8 0.6 100 50 30 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in 10 5 0.1 temperature. Tested without a substrate. 0.3 1 3 VCEO max 10 30 100 (2) 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 3 2004-07-07 2SC2883 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-07