2SC2983_05

2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • • High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 160 160 5 1.5 0.3 1.0 15 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-7B1A Weight: 0.36 g (typ.) JEDEC JEITA TOSHIBA ― ― 2-7J1A Weight: 0.36 g (typ.) 1 2005-02-01 2SC2983 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO V (BR) EBO Test Condition VCB = 160 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 A, IB = 0 IE = 1 mA, IC = 0 Min ― ― 160 5 70 ― ― ― ― Typ. ― ― ― ― ― ― ― 100 25 Max 1.0 1.0 ― ― 240 1.5 1.0 ― ― V V MHz pF Unit µA µA V V hFE VCE = 5 V, IC = 100 mA (Note) VCE (sat) VBE fT Cob IC = 500 mA, IB = 50 mA VCE = 5 V, IC = 500 mA VCE = 10 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Note: hFE classification O: 70 to 140, Y: 120 to 240 Marking C2983 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-01 2SC2983 IC – VCE 1.2 20 12 500 hFE – IC hFE Common emitter 8 6 Tc = 25°C 300 Common emitter Tc = 100°C 25 100 −25 50 30 VCE = 5 V 1.0 Collector current IC (A) 0.8 0.6 4 0.4 DC current gain IB = 2 mA 10 0.003 0.01 0.03 0.1 0.3 1 0.2 0 0 0 2 4 6 8 10 12 14 Collector current IC (A) Collector-emitter voltage VCE (V) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter 0.5 0.3 Tc = 100°C 0.1 0.05 25 −25 IC/IB = 10 fT – IC (MHz) 300 Common emitter VCE = 10 V Tc = 25°C 100 50 30 1 0.02 0.003 Transition frequency fT 0.01 0.03 0.1 0.3 1 10 −5 −10 −30 −100 −300 −1000 Collector current IC (mA) Collector current IC (mA) Safe Operating Area 5 3 IC max (pulsed)* IC max (continuous) 1 ms* 10 ms PC – Ta 24 PC (W) 20 (2) Ceramic substrate 50 × 50 × 0.8 mm IC (A) (1) Tc = Ta infinite heat sink 1 0.5 0.3 DC operation Tc = 25°C Collector power dissipation 12 Collector current 16 (1) (3) No heat sink 0.1 0.05 0.03 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. VCEO max 30 100 300 8 4 (2) (3) 0 0 20 40 60 80 100 120 140 160 0.01 1 3 10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) 3 2005-02-01 2SC2983 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2005-02-01