2SC3072

2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) • • Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Pulse (Note 1) Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rating 50 40 20 8 5 8 0.5 1.0 10 150 −55 to 150 A A W °C °C Unit V V V JEDEC JEITA TOSHIBA ― ― 2-7B1A Weight: 0.36 g (typ.) Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) JEDEC JEITA TOSHIBA ― ― 2-7J1A Weight: 0.36 g (typ.) 1 2005-02-01 2SC3072 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO Test Condition VCB = 40 V, IE = 0 VEB = 8 V, IC = 0 IC = 10 mA, IB = 0 Min ― ― 20 140 70 ― ― ― ― Typ. ― ― ― ― ― ― ― 100 40 Max 100 100 ― 450 ― 1.0 1.5 ― ― V V MHz pF Unit nA nA V DC current gain hFE (1) VCE = 2 V, IC = 0.5 A (Note 2) hFE (2) VCE = 2 V, IC = 4 A IC = 4 A, IB = 0.1 A VCE = 2 V, IC = 4 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Collector emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Note 2: hFE (1) classification A: 140 to 240, B: 200 to 330, C: 300 to 450 Marking C3072 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-01 2SC3072 IC – VCE 10 Common emitter Tc = 25°C 8 Common emitter VCE = 2 V IC – VBE IC (A) IC (A) Collector current 50 30 20 8 200 150 100 6 Collector current 6 70 4 4 Tc = 100°C 2 25 −25 2 IB = 10 mA 0 0 0 1 2 3 4 5 6 0 0 0.4 0.8 1.2 1.6 2.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC Collector-emitter saturation voltage VCE (sat) (V) 1000 500 Tc = 100°C 25 −25 100 50 30 Common emitter 10 0.01 VCE = 2 V 0.03 0.1 0.3 1 3 10 3 Common emitter IC/IB = 40 1 0.5 0.3 VCE (sat) – IC hFE DC current gain 300 Tc = 100°C 25 −25 0.1 0.05 0.03 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (mA) Collector current IC (A) Safe Operating Area PC – Ta 12 PC (W) 10 (A) (1) (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 10 5 3 IC max (pulsed)** IC max (continuous) 1 ms* 10 ms* 100 ms* Collector current IC Collector power dissipation 8 DC operation Tc = 25°C 6 1 *: Single nonrepetitive pulse Tc = 25°C Duty cycle = 30％ (max) 4 0.5 (2) 0.3 **: Pulse width = 10 ms (max) Curves must be derated linearly with VCEO max increase in temperature. 1 3 10 30 2 (3) 0 0 25 50 75 100 125 150 175 0.1 0.3 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) 3 2005-02-01 2SC3072 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2005-02-01