2SC3074_05

2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switching Applications • • • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: tstg = 1.0 µs (typ) Complementary to 2SA1244 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 5 1 1.0 20 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-7B1A Weight: 0.36 g (typ.) JEDEC JEITA TOSHIBA ― ― 2-7J1A Weight: 0.36 g (typ.) 1 2005-02-01 2SC3074 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 Min ― ― 50 70 30 ― ― ― ― OUTPUT 10 Ω ― Typ. ― ― ― ― ― 0.2 0.9 120 80 0.1 Max 1 1 ― 240 ― 0.4 1.2 ― ― ― V V MHz pF Unit µA µA V DC current gain hFE (1) VCE = 1 V, IC = 1 A (Note) hFE (2) VCE = 1 V, IC = 3 A IC = 3 A, IB = 0.15 A IC = 3 A, IB = 0.15 A VCE = 4 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time VCE (sat) VBE (sat) fT Cob ton 20 µs INPUT IB1 IB1 IB2 Switching time Storage time tstg IB2 ― 1.0 ― µs VCC = 30 V ― 0.1 ― Fall time tf IB1 = −IB2 = 0.15 A, Duty cycle ≤ 1% Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking C3074 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-01 2SC3074 IC – VCE 10 Common emitter 8 100 90 Tc = 100°C 80 70 60 6 50 40 30 20 2 IB = 10 mA 0 0 0 2 4 6 8 10 12 0 0 1 2 1.0 1.2 VCE – IC Common emitter Tc = 25°C IB = 10 mA 20 40 60 80 100 150 0.6 200 0.4 300 500 IC (A) Collector-emitter voltage VCE (V) 0.8 Collector current 4 0.2 3 4 5 6 7 Collector-emitter voltage VCE (V) Collector current IC (A) VCE – IC 1.2 VCE – IC (V) Common emitter Tc = 100°C Common emitter 1.0 IB = 20 mA 40 120 160 200 Tc = −55°C VCE (V) 1.0 0.8 20 0.6 IB = 10 mA 40 60 80 100 120 VCE Collector-emitter voltage 150 200 500 0.8 Collector-emitter voltage 0.6 250 300 500 0.4 0.4 0.2 0.2 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 6 7 Collector current IC (A) Collector current IC (A) hFE – IC 1000 500 VCE = 1 V Tc = 100°C 25 1 VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter Common emitter 0.5 IC/IB = 20 0.3 Tc = −55°C 0.1 0.05 0.03 100 25 hFE DC current gain 300 100 50 30 −55 10 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) 3 2005-02-01 2SC3074 VBE (sat) – IC 10 Common emitter 5 IC – VBE Common emitter VCE = 1 V 4 Base-emitter saturation voltage VBE (sat) (V) 5 3 IC/IB = 20 IC (A) Collector current Tc = −55°C 1 0.5 0.3 3 Tc = 100°C 2 −55 25 25 100 1 0.1 0.03 0.1 0.3 1 3 10 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Collector current IC (A) Base-emitter voltage VBE (V) Safe Operating Area 10 28 PC – Ta PC (W) (1) Tc = Ta infinite heat sink 24 20 16 12 8 4 0 0 (2) (3) 20 40 60 80 100 120 140 160 (1) (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 5 3 IC max (pulsed)* IC max (continuous) DC operation Tc = 25°C 1 ms* 10 ms* IC (A) 1 0.5 0.3 0.1 *: Single nonrepetitive pulse 0.05 0.03 Tc = 25°C Curves must be derated linearly with increase in 0.01 0.1 temperature. 0.3 1 3 10 30 100 VCEO max Collector power dissipation Collector current Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) 4 2005-02-01 2SC3074 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2005-02-01