2SC3075

2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • • Excellent switching times: tr = 1.0 μs (max) tf = 1.5 μs (max), (IC = 0.5 A) High collector breakdown voltage: VCEO = 400 V Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 500 400 7 0.8 1.5 0.5 1.0 10 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-7B1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC JEITA TOSHIBA ― ― 2-7J1A Weight: 0.36 g (typ.) 1 2006-11-09 2SC3075 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise on time Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) tr Test Condition VCB = 400 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 0.5 A IC = 0.1 A, IB = 0.01 A IC = 0.1 A, IB = 0.01 A OUTPUT 400 Ω Min ― ― 500 400 20 10 ― ― ― Typ. ― ― ― ― ― ― ― ― ― Max 100 100 ― ― 100 ― 0.5 1.0 1.0 V V Unit μA μA V V 20 μs IB1 INPUT IB2 IB1 IB2 Switching time Storage time tstg ― ― 2.5 μs VCC ≈ 200 V ― ― 1.5 Fall time tf IB1 = −IB2 = 0.05 A, Duty cycle ≤ 1% Marking C3075 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SC3075 IC – VCE 1000 Common emitter Tc = 25°C 800 80 60 100 300 hFE – IC Tc = 100°C 25 −40 (mA) DC current gain hFE 40 600 30 20 400 10 5 200 IB = 2 mA 0 2 4 6 8 10 12 50 30 Collector current IC 10 5 3 Common emitter VCE = 5 V 1 1 3 10 30 100 300 1000 0 0 Collector current IC (mA) Collector-emitter voltage VCE (V) VCE (sat) – IC 10 10 Common emitter 5 3 5 3 Common emitter IC/IB = 5 VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) IC/IB = 10 1 0.5 0.3 1 0.5 0.3 0.1 0.05 0.03 1 3 Tc = 100°C 25 −40 10 30 100 300 1000 0.1 0.05 0.03 1 3 10 Tc = 100°C 25 30 −40 100 300 1000 Collector current IC (mA) Collector current IC (mA) VBE (sat) – IC 10 10 Common emitter 5 3 IC/IB = 10 VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Common emitter 5 3 IC/IB = 5 Base-emitter saturation voltage VBE (sat) (V) 1 0.5 0.3 Tc = −40°C 1 0.5 0.3 Tc = −40°C 25 100 25 100 0.1 1 3 10 30 100 300 1000 0.1 1 3 10 30 100 300 1000 Collector current IC (mA) Collector current IC (mA) 3 2006-11-09 2SC3075 IC – VBE 1 Common emitter VCE = 5 V 10−1 800 1000 IC – VBE Common emitter VCE = 5 V Collector current IC Collector current IC (mA) (A) 600 10 −2 Tc = 100°C 25 −40 400 Tc = 100°C 25 −40 200 10−3 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) Switching Characteristics 100 50 30 IC/IB = 10 IB1 = −IB2 Pulse width = 20 μs Duty cycle ≤ 1% 10 5 3 tf tstg Tc = 25°C 3 Safe Operating Area IC max (pulsed)* 10 μs* 100 μs* 1 ms* (A) 1 0.5 0.3 IC max (continuous) DC operation Tc = 25°C 10 ms* Switching time (μs) Collector current IC 0.1 0.05 0.03 Tc = 25°C 100 ms* *: Single nonrepetitive pulse Curves must be derated linearly with increase in temperature. VCEO max 3 10 30 100 300 1000 1 0.5 0.3 tr 0.01 1 0.1 0.2 0.3 0.4 0.5 0.1 0 Collector-emitter voltage VCE (V) Collector current IC (A) rth – tw Curves should be applied in thermal limited area. (Single nonrepetitive pulse) Transient thermal resistance rth (°C/W) (1) Infinite heat sink (2) No heat sink 100 (2) 10 (1) 1 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) 4 2006-11-09 2SC3075 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-09