2SC3076_05

2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications • • • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) Excellent switching time: tstg = 1.0 µs (typ.) Complementary to 2SA1241 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 2 1 1.0 10 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-7B1A Weight: 0.36 g (typ.) JEDEC JEITA TOSHIBA ― ― 2-7J1A Weight: 0.36 g (typ.) 1 2005-02-01 2SC3076 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 Min ― ― 50 70 40 ― ― ― ― OUTPUT 30 Ω ― Typ. ― ― ― ― ― ― ― 80 30 0.1 Max 1.0 1.0 ― 240 ― 0.5 1.2 ― ― ― V V MHz pF Unit µA µA V DC current gain hFE (1) VCE = 2 V, IC = 0.5 A (Note) hFE (2) VCE = 2 V, IB = 1.5 A IC = 1 A, IB = 0.05 A IC = 1 A, IB = 0.05 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time VCE (sat) VBE (sat) fT Cob ton 20 µs 0 IB1 INPUT IB2 IB1 IB2 Switching time Storage time tstg ― 1.0 ― µs VCC = 30 V ― 0.1 ― Fall time tf IB1 = −IB2 = 0.05 A, Duty cycle ≤ 1% Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking C3076 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-01 2SC3076 VCE – IC 1.2 1.2 VCE – IC (V) Common emitter Common emitter 1.0 Tc = 100°C (V) 1.0 IB = 5 mA 10 20 Tc = 25°C VCE VCE 0.8 0.8 Collector-emitter voltage 0.6 Collector-emitter voltage IB = 5 mA 10 20 0.6 0.4 30 0.2 40 0.4 30 40 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Collector current IC (A) Collector current IC (A) VCE – IC 1.2 1000 Common emitter 1.0 IB = 5 mA 0.8 10 20 30 Tc = −55°C 500 hFE – IC Common emitter VCE = 2 V VCE (V) hFE 300 Tc = 100°C 25 −55 50 30 Collector-emitter voltage DC current gain 50 0.6 100 0.4 40 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 10 0.01 0.03 0.05 0.1 0.3 0.5 1 2 Collector current IC (A) Collector current IC (A) VCE (sat) – IC 1 10 Common emitter VBE (sat) – IC Common emitter Collector-emitter saturation voltage VCE (sat) (V) Base-emitter saturation voltage VBE (sat) (V) 0.5 0.3 IC/IB = 20 5 3 IC/IB = 20 0.1 0.05 0.03 Tc = 100°C 1 0.5 0.3 Tc = −55°C 25 100 25 −55 0.01 0.01 0.03 0.05 0.1 0.3 0.5 1 2 0.1 0.01 0.03 0.05 0.1 0.3 0.5 1 2 Collector current IC (A) Collector current IC (A) 3 2005-02-01 2SC3076 IC – VBE 2.0 12 PC – Ta PC (W) Common emitter VCE = 2 V (1) (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 10 IC (A) 1.5 1.0 Collector power dissipation 8 Collector current 6 4 0.5 Tc = 100°C 25 −55 (2) 2 (3) 0 0 0.4 0.8 1.2 1.6 0 0 25 50 75 100 125 150 175 Base-emitter voltage VBE (V) Ambient temperature Ta (°C) Safe Operating Area 5 3 IC max (pulsed)* IC max (continuous) 1 ms* 10 ms* 100 ms* 1 IC (A) DC operation Tc = 25°C 0.5 0.3 Collector current 0.1 0.05 0.03 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.5 1 3 5 10 VCEO max 30 50 100 Collector-emitter voltage VCE (V) 4 2005-02-01 2SC3076 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2005-02-01