2SC3303

2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 High Current Switching Applications DC-DC Converter Applications • • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High speed switching time: tstg = 1.0 µs (typ.) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 100 80 7 5 8 1 1.0 20 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-7B1A Weight: 0.36 g (typ.) JEDEC JEITA TOSHIBA ― ― 2-7J1A Weight: 0.36 g (typ.) 1 2005-02-01 2SC3303 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO Test Condition VCB = 100 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 Min ― ― 80 70 40 ― ― ― ― OUTPUT 10 Ω ― Typ. ― ― ― ― ― 0.2 0.9 120 80 0.2 Max 1 1 ― 240 ― 0.4 1.2 ― ― ― V V MHz pF Unit µA µA V DC current gain hFE (1) VCE = 1 V, IC = 1 A (Note) hFE (2) VCE = 1 V, IC = 3 A IC = 3 A, IB = 0.15 A IC = 3 A, IB = 0.15 A VCE = 4 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time VCE (sat) VBE (sat) fT Cob ton 20 µs INPUT IB1 IB1 IB2 Switching time Storage time tstg IB2 ― 1.0 ― µs VCC ≈ 30 V ― 0.1 ― Fall time tf IB1 = −IB2 = 0.15 A, DUTY CYCLE ≤ 1% Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking C3303 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-01 2SC3303 IC – VCE 0.8 VCE – IC Common emitter (V) 5 100 90 80 70 60 50 Tc = 25°C 40 30 Common emitter Tc = 100°C 0.6 IB = 20 mA 40 60 IC (A) 4 VCE 3 Collector-emitter voltage 80 0.4 Collector current 2 20 1 IB = 10 mA 0.2 100 140 0 0 0 2 4 6 8 10 12 14 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector current IC (A) VCE – IC 0.8 0.8 VCE – IC (V) 40 60 80 IB = 20 mA 0.6 40 60 80 100 (V) IB = 20 mA 0.6 VCE Collector-emitter voltage Collector-emitter voltage VCE 0.4 100 140 0.4 140 0.2 Common emitter Tc = 25°C 0 0 1 2 3 4 5 0.2 Common emitter Tc = −55°C 0 0 1 2 3 4 5 Collector current IC (A) Collector current IC (A) hFE – IC 1000 5 VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) 3 Common emitter IC/IB = 20 1 0.5 0.3 500 hFE 300 Tc = 100°C 25 −55 DC current gain 100 50 30 0.1 0.05 0.03 25 0.01 0.003 0.01 0.03 0.1 0.3 1 3 10 Tc = −55°C 100 10 5 2 0.003 Common emitter VCE = 1 V 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) 3 2005-02-01 2SC3303 VBE (sat) – IC 30 5 Common emitter 10 5 3 Tc = −55°C IC/IB = 20 4 Common emitter VCE = 1 V IC – VBE Base-emitter saturation voltage VBE (sat) (V) IC (A) Collector current 25 100 0.01 0.03 0.1 0.3 1 3 10 3 1 0.5 0.3 2 Tc = 100°C 25 1 −55 0.1 0.003 Collector current IC (A) 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-emitter voltage VBE (V) rth – tw Curves should be applied in thermal limited area. (single nonrepetitive pulse) 20 10 5 Safe Operating Area IC max (pulsed)* IC max (continuous) 100 µs* 1 ms* 1 0.5 0.3 10 ms* DC operation Tc = 25°C *: Single nonrepetitive pulse 0.1 Tc = 25°C Curves must be derated linearly 10 µs* Transient thermal resistance rth (°C/W) (1) Infinite heat sink IC (A) 1000 (2) No heat sink 100 3 (2) 10 (1) 1 0.1 0.001 0.01 0.1 1 10 100 Collector current Pulse width tw (s) 0.05 with increase in temperature. 0.03 0.3 1 3 10 30 100 Collector-emitter voltage VCE (V) 4 2005-02-01 2SC3303 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2005-02-01