2SC3326-A,LF

2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit: mm  AEC-Q101 Qualified (Note1).  High emitter-base voltage: VEBO = 25 V  High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)  Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)  High DC current gain: hFE = 200 to 1200  Small package Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 300 mA Base current IB 60 mA PC (Note 2, 4) 200 PC (Note 3) 150 Tj (Note 2) 150 Tj (Note 3) 125 Tstg (Note 2) −55 to 150 Tstg (Note 3) −55 to 125 Collector power dissipation Junction temperature Storage temperature range mW JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. Note 4: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.8 mm2 × 3) Marking Part No.(abbreviation code) hFE Rank CCA Start of commercial production 1982-12 © 2018 - 2021 Toshiba Electronic Devices & Storage Corporation 1 2021-04-25 2SC3326 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 A ― ― 0.1 μA Emitter cut-off current IEBO VEB = 25 V, IC = 0 A ― ― 0.1 μA DC current gain hFE VCE = 2 V, IC = 4 mA (Note) 200 ― 1200 ― VCE (sat) IC = 30 mA, IB = 3 mA ― 0.042 0.1 V Base-emitter voltage VBE VCE = 2 V, IC = 4 mA ― 0.61 ― V Transition frequency fT VCE = 6 V, IC = 4 mA ― 30 ― MHz VCB = 10 V, IE = 0 A, f = 1 MHz ― 4.8 7 pF ― 160 ― ― 500 ― ― 130 ― Cob Turn-on time OUTPUT ton INPUT Storage time tstg 50 Ω Switching time 10 V 0 1 μs Fall time 4 kΩ tf VBB = −3 V 1 kΩ Collector output capacitance 3 kΩ Collector-emitter saturation voltage VCC = 12 V ns Duty cycle ≤ 2% Note: hFE classification A: 200 to 700, B: 350 to 1200 © 2018 - 2021 Toshiba Electronic Devices & Storage Corporation 2 2021-04-25 2SC3326 IC – VCE IC – VCE 50 160 140 Common emitter (mA) Ta = 25°C 120 40 100 Collector current IC Collector current IC (mA) Common emitter 80 30 60 40 20 (Reverse region) −10 IB = 20 μA 10 50 Ta = 25°C −8 40 30 −6 20 −4 IB = 10 μA −2 0 0 0 2 4 6 8 10 Collector emitter voltage VCE 0 0 12 (V) 0 −2 −4 Collector-emitter saturation voltage VCE (sat) (mV) hFE DC current gain Ta = 100°C 500 25 -25 Common emitter 100 VCE = 6 V VCE = 2 V 50 0.3 1 3 10 Collector current 30 IC 100 300 (mA) (V) Common emitter IC/IB = 10 100 Ta = 25°C 50 30 10 5 3 1 0.1 0.3 (mA) 1 3 10 Collector current 30 IC 100 300 (mA) fT – IC 500 300 Common emitter Common emitter 300 VCE = 6 V VCE = 2 V Transition frequency fT (MHz) Collector current IC −12 500 IC – VBE 200 Ta = 100°C 100 0 0 −10 VCE (sat) – IC 3000 300 −8 Collector emitter voltage VCE hFE – IC 5000 1000 −6 25 -25 0.4 0.8 Base-emitter voltage 1.2 VBE 50 30 10 5 0.1 1.6 (V) © 2018 - 2021 Toshiba Electronic Devices & Storage Corporation Ta = 25°C 100 0.3 1 3 Collector current 3 10 IC 30 100 (mA) 2021-04-25 2SC3326 Cob – VCB RON – IB 100 1 kΩ IE = 0 A Ta = 25°C 10 5 3 1 0.3 1 3 10 Collector-base voltage 30 50 30 10 kΩ f = 1 MHz Collector-emitter ON resistance RON (Ω) Collector output capacitance Cob (pF) 30 10 IB 5 3 1 0.5 0.3 0.01 0.03 0.1 0.3 1 3 10 VCB (V) Base current IB (mA) Pc - Ta (Note) 300 COLLECTOR POWER DISSIPATION Pc (mW) PC – Ta (Note) Collector power dissipation PC (mW) 250 200 150 100 50 0 0 25 50 75 Ambient temperature 100 125 150 250 Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.8 mm2 × 3) 200 150 100 50 0 0 Ta (°C) 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta (℃) Note: Reference only with Tj of 125 ℃. Note: Reference only with Tj of 150 ℃. The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2018 - 2021 Toshiba Electronic Devices & Storage Corporation 4 2021-04-25 2SC3326 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”.  TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.  This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.  Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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