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2SC3328

2SC3328

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    2SC3328 - NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS) - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
2SC3328 数据手册
2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm • • • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SA1315 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 5 2 1 900 150 −55 to 150 Unit V V V A A mW °C °C JEDEC JEITA TO-92MOD ― TOSHIBA 2-5J1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.36 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SC3328 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time VCE (sat) VBE (sat) fT Cob ton 20 μ s IB1 Switching time Storage time tstg Input Test Condition VCB = 80 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.5 A IC = 1 A, IB = 0.05 A IC = 1 A, IB = 0.05 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Output 30 Ω Min ― ― 80 70 40 ― ― ― ― ― Typ. ― ― ― ― ― 0.15 0.9 100 30 0.2 Max 1.0 1.0 ― 240 ― 0.5 1.2 ― ― ― V V MHz pF Unit μA μA V IB1 IB2 IB2 ― 1.0 ― μs VCC = 30 V Fall time tf IB1 = −IB2 = 0.05 A, duty cycle ≤ 1% ― 0.2 ― Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking C3328 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SC3328 IC – VCE 2.0 35 25 20 15 VCE – IC Common emitter VCE (V) Ta = 25°C (A) 1.6 Collector current IC 1.2 0.8 IB = 5 mA Common emitter Ta = 25°C 0 2 4 6 8 10 12 Collector-emitter voltage 10 IB = 5 mA 10 15 20 30 40 50 0.4 0 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Collector-emitter voltage VCE (V) Collector current IC (A) VCE – IC 1 Common emitter 1 VCE – IC Common emitter VCE (V) Ta = 100°C 0.8 IB = 5 mA 0.6 10 15 20 30 40 VCE (V) 0.8 IB = 5 mA 10 15 20 30 40 Ta = −55°C 50 Collector-emitter voltage Collector-emitter voltage 0.6 0.4 50 0.4 70 0.2 0.2 0 0 ) 0.4 0.8 1.2 1.6 2.0 2.4 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Collector current IC (A) Collector current IC (A) hFE – IC 500 Common emitter 300 VCE = 2 V Ta = 100°C 100 50 30 25 −55 0.5 VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter 0.3 IC/IB = 20 DC current gain hFE 0.1 0.05 Ta = 100°C 25 −55 0.03 10 0.01 0.03 0.1 0.3 1 0.01 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) 3 2006-11-09 2SC3328 VBE (sat) – IC Base-emitter saturation voltage VCE (sat) (V) 3 Common emitter IC/IB = 20 1 Ta = −55°C 1.6 2.0 Common emitter VCE = 2 V IC – VBE 0.5 0.3 100 25 Collector current IC (A) 1.2 0.8 Ta = 100°C 25 −55 0.1 0.01 0.03 0.1 0.3 1 0.4 Collector current IC (A) 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.6 Base-emitter voltage VBE (V) Safe Operating Area 5 3 IC max (continuous) 1 ms* 10 ms* 1 PC – Ta 1200 (mW) Collector power dissipation PC IC max (pulsed)* 1000 (A) 0.5 0.3 1 s* DC operation Ta = 25°C 100 ms* 800 Collector current IC 600 0.1 0.05 0.03 *: Single nonrepetitive pulse Ta = 25°C 0.01 Curves must be derated linearly with increase in 0.005 temperature. 0.003 0.3 1 3 10 400 200 VCEO max 30 100 300 0 0 40 80 120 160 200 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) 4 2006-11-09 2SC3328 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-09
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