2SC3474_05

2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Switching Applications Solenoid Drive Applications • • High DC current gain: hFE = 500 (min) (IC = 400 mA) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 7 2 0.5 1.0 20 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-7B1A Weight: 0.36 g (typ.) JEDEC JEITA TOSHIBA ― ― 2-7J1A Weight: 0.36 g (typ.) 1 2005-02-01 2SC3474 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob ton Test Condition VCB = 80 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 400 mA IC = 300 mA, IB = 1 mA IC = 300 mA, IB = 1 mA VCE = 2 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz OUTPUT 100 Ω Min ― ― 80 500 ― ― ― ― ― Typ. ― ― ― ― 0.3 ― 85 50 2 Max 1 1 ― ― 0.5 1.1 ― ― ― V V MHz pF Unit µA µA V 20 µs INPUT IB1 IB1 IB2 Switching time Storage time tstg IB2 ― 5 ― µs VCC = 30 V ― 2 ― Fall time tf IB1 = −IB2 = 1 mA, DUTY CYCLE ≤ 1% Marking C3474 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-01 2SC3474 IC – VCE 2.0 Common emitter Tc = 25°C 1.6 2.0 2.0 VCE – IC Common emitter (V) 1.6 1.2 1 IC (A) 1.6 IB = 0.5 mA 1 2 4 6 Tc = 25°C 8 10 12 16 1.2 Collector-emitter voltage VCE 1.2 Collector current 0.8 0.6 0.4 0.8 0.8 20 0.4 IB = 0.2 mA 0 0.4 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Collector-emitter voltage VCE (V) Collector current IC (A) VCE – IC 2.0 Common emitter 2.0 VCE – IC Common emitter (V) 1.6 IB = 0.5 mA 1 2 4 6 8 10 12 Tc = 100°C 16 20 (V) 1.6 IB = 0.5 mA 1 2 4 6 Tc = −55°C 8 10 12 VCE Collector-emitter voltage 1.2 Collector-emitter voltage VCE 1.2 0.8 0.8 16 0.4 0.4 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Collector current IC (A) Collector current IC (A) hFE – IC 5000 3000 Tc = 100°C VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter VCE = 1 V 5 3 Common emitter IC/IB = 300 hFE 1000 500 300 25 −55 1 0.5 0.3 Tc = 100°C 25 0.1 0.05 0.03 0.01 0.03 0.1 0.3 1 3 −55 DC current gain 100 50 30 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Collector current IC (A) 3 2005-02-01 2SC3474 VBE (sat) – IC 5 Common emitter IC – VBE 2.0 Common emitter VCE = 1 V Base-emitter saturation voltage VBE (sat) (V) 3 IC/IB = 300 IC (A) Collector current 1.6 1 Tc = −55°C 25 1.2 0.5 0.3 100 0.8 0.4 0.1 0.01 0.03 0.1 0.3 1 2 0 0 Tc = 100°C 25 −55 Collector current IC (A) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-emitter voltage VBE (V) Safe Operating Area 5 24 PC – Ta PC (W) 100 µs* 1 ms* (1) (1) Tc = Ta infinite heat sink (2) Mounted on a ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 3 IC max (pulsed)* IC max (continuous) 20 IC (A) DC operation Tc = 25°C 0.5 0.3 Collector power dissipation 1 10 ms* 16 12 Collector current 8 0.1 0.05 0.03 4 (2) (3) *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. VCEO max 30 100 0 0 25 50 75 100 125 150 175 Ambient temperature Ta (°C) 0.01 1 3 10 Collector-emitter voltage VCE (V) 4 2005-02-01 2SC3474 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2005-02-01