2SC3668_04

2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3668 Power Amplifier Applications Power Switching Applications Unit: mm • • • • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 1000 mW High-speed switching: tstg = 1.0 µ (typ.) Complementary to 2SA1428. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 2 0.5 1000 150 −55 to 150 Unit V V V A A mW °C °C JEDEC JEITA TOSHIBA ― ― 2-7D101A Weight: 0.2 g (typ.) 1 2004-07-07 2SC3668 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time VCE (sat) VBE (sat) fT Cob ton 0 IB1 Switching time Storage time tstg Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.5 A IC = 1 A, IB = 0.05 A IC = 1 A, IB = 0.05 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IC = 0, f = 1 MHz Output 30 Ω Min ― ― 50 70 40 ― ― ― ― ― Typ. ― ― ― ― ― ― ― 100 30 0.1 Max 1.0 1.0 ― 240 ― 0.5 1.2 ― ― ― V V MHz pF Unit µA µA V 20 µs Input IB2 IB1 IB2 ― 1.0 ― µs VCC = 30 V Fall time tf IB1 = −IB2 = 0.05 A, duty cycle ≤ 1% ― 0.1 ― Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking C3668 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC3668 IC – VCE 2.4 25 20 18 15 12 10 1.2 8 6 0.8 4 IB = 2 mA 0 2 4 6 8 10 12 14 1.0 Common emitter Ta = 25°C VCE – IC 2.0 (V) Collector-emitter voltage VCE 0.8 0.6 IB = 5 mA 0.4 30 0.2 Ta = 25°C 0 0 0.4 0.8 1.2 1.6 2.0 2.4 40 Common emitter 10 20 IC (A) Collector current 1.6 0.4 0 0 Collector-emitter voltage VCE (V) Collector current IC (A) VCE – IC 1.0 1.0 IB = 5 mA VCE – IC (V) Collector-emitter voltage VCE (V) 0.8 Collector-emitter voltage VCE 0.8 0.6 IB = 5 mA 0.4 10 20 30 0.6 10 20 30 0.4 40 0.2 50 Common emitter Ta = −55°C 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0.2 40 Common emitter Ta = 100°C 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Collector current IC (A) ) Collector current IC (A) hFE – IC 1000 Common emitter 500 VCE = 2 V 1 VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter 0.5 0.3 IC/IB = 20 hFE 300 Ta = 100°C DC current gain 100 50 30 25 −55 0.1 Ta = 100°C 0.05 −55 0.02 0.01 0.03 0.1 25 10 0.01 0.03 0.1 0.3 1 0.3 1 Collector current IC (A) Collector current IC (A) 3 2004-07-07 2SC3668 VBE (sat) – IC 5 2.0 Common emitter IC/IB = 20 IC – VBE Common emitter VCE = 2 V Base-emitter saturation voltage VBE (sat) (V) 3 IC (A) Collector current 1.5 1 0.5 0.3 Ta = −55°C 100 25 1.0 0.5 Ta = 100°C 25 −55 0.1 0.01 0.03 0.1 0.3 1 2 0 0 Collector current IC (A) 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V) PC – Ta 5 1.2 3 Safe Operating Area IC max (pulsed)* 1 ms* IC max (continuous) 1 s* DC operation Ta = 25°C 0.1 0.05 0.03 *: Single nonrepetitive pulse Ta = 25°C 0.01 Curves must be derated linearly with increase in 0.005 temperature 0.003 0.1 0.3 1 3 10 30 100 10 ms* 100 ms* (W) 1.0 1 PC (A) 20 40 60 80 100 120 140 160 Collector dissipation 0.8 0.5 0.3 0.6 0.4 0.2 0 0 Ambient temperature Ta (°C) Collector current IC Collector-emitter voltage VCE (V) 4 2004-07-07 2SC3668 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07