2SC3672
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (PCT Process)
2SC3672
High-Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
•
High breakdown voltage: VCBO = 300 V, VCEO = 300 V
•
Low saturation voltage: VCE (sat) = 0.5 V (max)
•
Small collector output capacitance: Cob = 3 pF (typ.)
•
Complementary to 2SA1432.
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
100
mA
JEDEC
―
Base current
IB
20
mA
JEITA
―
Collector power dissipation
PC
1000
mW
TOSHIBA
Junction temperature
Tj
150
°C
Tstg
−55 to 150
°C
Storage temperature range
2-7D101A
Weight: 0.2 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2SC3672
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 300 V, IE = 0
―
―
0.1
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
―
―
0.1
μA
Collector-base breakdown voltage
V (BR) CBO
IC = 0.1 mA, IE = 0
300
―
―
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 1 mA, IB = 0
300
―
―
V
VCE = 10 V, IC = 20 mA
30
―
150
hFE (2)
VCE = 10 V, IC = 1 mA
20
―
―
Collector-emitter saturation voltage
VCE (sat)
IC = 20 mA, IB = 2 mA
―
―
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 20 mA, IB = 2 mA
―
―
1.2
V
VCE = 10 V, IC = 20 mA
50
80
―
MHz
VCB = 20 V, IE = 0, f = 1 MHz
―
3
4
pF
hFE (1)
(Note 2)
DC current gain
Transition frequency
fT
Collector output capacitance
Cob
Note 2: hFE (1) classification R: 30 to 90, O: 50 to 150
Marking
C3672
Part No. (or abbreviation code)
Lot No.
Characteristics
indicator
Note 3
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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2SC3672
IC – VCE
IC – VCE
120
120
Common emitter
(mA)
5
80
3
2
60
1
0.8
0.6
0.5
0.4
0.3
40
20
4
6
8
5
4
3
60
2
1
0.6
0.4
0.2
40
IB = 0.1 mA
IB = 0.1 mA
0
2
7
80
20
0.2
0
0
Ta = 100°C
10
100
Collector current IC
Collector current IC
(mA)
100
Common emitter
Ta = 25°C
10
10
12
0
0
0
14
2
Collector-emitter voltage VCE (V)
4
6
8
IC – VCE
IC – VCE
12
Common emitter
10
100
10
Collector current IC
2
1
60
0.8
40
0.6
0.5
0.4
20
0.3
0.2
0
0
0
2
4
6
8
100
Ta = 25°C
90
(mA)
3
(mA)
Collector current IC
Common emitter
Ta = −55°C
5
80
80
8
70
60
6
50
40
4
30
20
2
IB = 10 μA
IB = 0.1 mA
10
12
0
0
14
Collector-emitter voltage VCE (V)
0
40
80
120
160
IC – VCE
240
280
IC – VCE
12
Common emitter
Common emitter
Ta = 100°C
70
Collector current IC
60
8
50
6
40
30
4
20
2
80
120
160
200
8
100
6
90
80
70
60
50
40
30
20 IB = 10 μA
0
4
2
IB = 10 μA
40
Ta = −55°C
10
(mA)
80
(mA)
Collector current IC
200
Collector-emitter voltage VCE (V)
12
0
0
14
Collector-emitter voltage VCE (V)
120
10
12
10
240
0
0
280
Collector-emitter voltage VCE (V)
40
80
120
160
200
240
280
Collector-emitter voltage VCE (V)
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hFE – IC
DC current gain hFE
300
hFE – IC
500
Common emitter
Ta = 25°C
300
DC current gain hFE
500
VCE = 10 V
100
50
5
1
30
10
5
0.1
0.3
1
10
3
Collector current IC
30
Ta = 100°C
25
100
−55
50
30
10
5
0.1
100
Common emitter
VCE = 10 V
0.3
(mA)
1
0.3
Ta = 100°C
−55
25
1
3
10
Collector current IC
30
Common emitter
(V)
5
VBE (sat)
Base-emitter saturation voltage
(V)
VCE (sat)
1
0.3
(mA)
VBE (sat) – IC
0.5
0.05
0.1
100
10
Common emitter
IC/IB = 10
0.1
IC/IB = 10
3
Ta = −55°C
1
0.5
100
0.3
0.1
0.1
100
0.3
(mA)
25
1
3
10
Collector current IC
30
100
(mA)
Common emitter
300
Ta = 25°C
VCE = 20 V
100
10
−5
50
30
10
−0.3
−1
−3
Collector current IC
−10
−30
Emitter input capacitance Cib (pF)
Collector output capacitance Cob (pF)
fT – IC
500
Transition frequency fT (MHz)
Collector-emitter saturation voltage
3
30
10
Collector current IC
VCE (sat) – IC
5
3
(mA)
Cib, Cob – VCB
300
f = 1 MHz
100
Ta = 25°C
Cib (IC = 0)
50
30
10
5
Cob (IE = 0)
3
1
0.1
0.3
1
3
10
Collector-base voltage
4
30
100
300
VCB (V)
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2SC3672
PC – Ta
Safe Operating Area
0.5
0.3
1.2
0.1
(A)
1.0
0.8
Collector current IC
Collector power dissipation PC
(W)
1.4
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
IC max (continuous)
10 ms*
0.05
DC operation
Ta = 25°C
0.01
0.005
0.003
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly with
0.0005 increase in temperature
Ambient temperature Ta (°C)
t = 1 ms*
0.03
0.001
160
IC max (pulsed)*
0.0003
1
3
10
VCEO max
30
100
300
1000
Collector-emitter voltage VCE (V)
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2SC3672
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
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Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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