2SC3710A_04

2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A High-Current Switching Applications Unit: mm • • • Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SA1452A Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 6 12 2 30 150 −55 to 150 Unit V V V A A W JEDEC °C °C ― ― 2-10R1A JEITA TOSHIBA Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time VCE (sat) VBE (sat) fT Cob ton 20 µs IB1 Switching time Storage time tstg Input IB2 Test Condition VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 IC = 50 mA, IB = 0 VCE = 1 V, IC = 1 A VCE = 1 V, IC = 6 A IC = 6 A, IB = 0.3 A IC = 6 A, IB = 0.3 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Weight: 1.7 g (typ.) Min ― ― 80 70 40 ― ― ― ― Output 5Ω ― Typ. ― ― ― ― ― 0.2 0.9 80 220 0.2 Max 10 10 ― 240 ― 0.4 1.2 ― ― ― V V MHz pF Unit µA µA V IB1 IB2 ― 1.0 ― µs VCC ≈ 30 V Fall time tf IB1 = −IB2 = 0.3 A, duty cycle ≤ 1% ― 0.2 ― Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 1 2004-07-07 2SC3710A Marking C3710A Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC3710A IC – VCE 1.0 VCE – IC (V) 50 40 Common emitter Tc = 25°C Common emitter Tc = 25°C 60 80 100 150 200 10 100 80 70 60 IC (A) VCE 0.8 IB = 20 mA 40 8 Collector-emitter voltage Collector current 6 30 0.6 300 0.4 4 20 400 600 2 IB = 10 mA 0.2 0 0 2 4 6 8 10 12 14 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) Collector current IC (A) VCE – IC 1.0 1.0 VCE – IC (V) Common emitter Tc = −55°C Common emitter Tc = 100°C 0.8 (V) 0.8 IB = 20 mA 40 60 80 100 VCE 150 200 VCE IB = 50 mA 0.6 100 150 200 300 Collector-emitter voltage 0.6 Collector-emitter voltage 0.4 300 600 0.4 400 700 0.2 0.2 0 0 2 4 6 8 10 12 0 0 2 4 6 8 10 12 Collector current IC (A) Collector current IC (A) hFE – IC 500 300 Common emitter VCE = 1 V Tc = 100°C 100 50 30 25 −55 1 VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter IC/IB = 20 0.5 0.3 DC current gain hFE 0.1 0.05 Tc = −55°C 25 100 10 0.1 0.3 1 3 10 20 0.02 0.1 0.3 1 3 10 20 Collector current IC (A) Collector current IC (A) 3 2004-07-07 2SC3710A VBE (sat) – IC 5 10 Common emitter IC/IB = 20 IC – VBE Common emitter VCE = 1 V Base-emitter saturation voltage VBE (sat) (V) 3 1 0.5 0.3 Tc = −55°C 100 IC (A) 25 8 6 Collector current Tc = 100°C 4 25 −55 0.1 0.1 2 0.3 1 3 10 20 0 0 Collector current IC (A) 0.4 0.8 1.2 1.6 2.0 2.4 Base-emitter voltage VBE (V) rth – tw 100 (°C/W) Curves should be applied in thermal limited area. 30 (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 10 (1) 3 (2) Transient thermal resistance rth 1 0.3 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area 30 IC max (pulsed)* 10 I max C (continuous) 5 3 DC operation Tc = 25°C 1 ms * 50 (1) Tc = Ta Infinite heat sink (2) No heat sink (1) 30 PC – Ta IC (A) (W) Collector dissipation PC 10 ms * 40 Collector current 1 0.5 0.3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 3 10 30 VCEO max 100 20 10 (2) 0 0 40 80 120 160 200 240 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 4 2004-07-07 2SC3710A RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07