2SC4541

2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier Applications Power Switching Applications • • • • • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) High speed switching time: tstg = 0.5 µs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1736 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC PC (Note) Tj Tstg 2 Rating 80 50 6 3 0.6 500 1000 150 −55 to 150 Unit V V V A A mW mW °C °C JEDEC JEITA TOSHIBA ― SC-62 2-5K1A Weight: 0.05 g (typ.) Note: Mounted on a ceramic substrate (250 mm × 0.8 t) 1 2004-07-07 2SC4541 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton 20 µs INPUT Switching time Storage time tstg IB1 IB2 Fall time tf IB1 = −IB2 = 75 mA, DUTY CYCLE ≤ 1% IB1 IB2 Test Condition VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 2 A IC = 1.5 A, IB = 75 mA IC = 1.5 A, IB = 75 mA VCE = 2 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz OUTPUT 20 Ω Min ― ― 50 120 40 ― ― ― ― ― Typ. ― ― ― ― ― ― ― 100 20 0.1 Max 0.1 0.1 ― 400 ― 0.5 1.2 ― ― ― V V MHz pF Unit µA µA V 30 V ― 0.5 ― µs ― 0.1 ― Marking Part No. (or abbreviation code) K Lot No. D A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC4541 IC – VCE 4 Common emitter 1000 hFE – IC IC (A) 60 3 Ta = 25°C 50 30 20 300 Ta = 100°C hFE 40 100 25 30 −25 Collector current 2 15 10 DC current gain 10 1 IB = 5 mA 3 0 0 0 1 2 3 4 5 1 1 3 10 30 100 Common emitter VCE = 2 V 300 1000 3000 Collector-emitter voltage VCE (V) Collector current IC (mA) VCE (sat) – IC 10 Common emitter 100 IC/IB = 20 VBE (sat) – IC Common emitter IC/IB = 20 Collector-emitter saturation voltage VCE (sat) (V) Base-emitter saturation voltage VBE (sat) (V) 3 30 1 10 0.3 3 Ta = −25°C 1 0.1 Ta = 100°C 0.03 25 −25 3 10 30 100 300 1000 3000 0.3 25 100 0.01 1 0.1 1 3 10 30 100 300 1000 3000 Collector current IC (mA) Collector current IC (mA) 3 2004-07-07 2SC4541 IC – VBE 3.0 Common emitter 2.5 VCE = 2 V 3 10 IC max (continuous ) Safe Operating Area IC max (pulse)* *100 ms *10 ms *t = 1 ms IC (A) IC (A) Collector current Ta = 100°C 25 −25 0.4 0.8 1.2 1.6 2.0 2.0 1 **: DC operation Ta = 25°C 40 × 50 × 0.8 t **: DC operation Ta = 25°C 250 mm2 × 0.8 t 0.1 **: DC operation Ta = 25°C 0.3 0.03 *: Single nonrepetitive pulse Ta = 25°C **: Mounted on a ceramic substrate Curves must be derated linearly 0.01 with increase in temperature 0.005 0.1 1 3 0.3 Collector current 1.5 1.0 0.5 0 0 Base-emitter voltage VBE (V) VCEO max 10 30 100 Collector-emitter voltage VCE (V) PC – Ta 1.4 PC (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 (1) (1) Mounted on a ceramic substrate 2 (250 mm × 0.8 t) (2) No heat sink Collector power dissipation (2) 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2004-07-07 2SC4541 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07