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2SC4604

2SC4604

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    2SC4604 - Power Amplifier Application Power Switching Applications. - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
2SC4604 数据手册
2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4604 Power Amplifier Application. Power Switching Applications. Unit: mm • • • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) High-speed switching: tstg = 0.5 µs (typ.) Complementary to 2SA1761 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 50 6 3 0.6 900 150 −55 to 150 Unit V V V A A mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Weight: 0.36 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IE = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 2 A IC = 1.5 A, IB = 75 mA IC = 1.5 A, IB = 75 mA VCE = 2 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Output 30 Ω Min ― ― 50 120 40 ― ― ― ― ― Typ. ― ― ― ― ― ― ― 100 20 0.1 Max 0.1 0.1 ― 400 ― 0.5 1.2 ― ― ― V V MHz pF Unit µA µA V 20 µs Input IB2 IB1 IB2 Switching time Storage time tstg ― 0.5 ― µs 30 V Fall time tf IB1 = −IB2 = 75 mA, duty cycle ≤ 1% ― 0.1 ― 1 2004-07-26 2SC4604 Marking C4604 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-26 2SC4604 IC – VCE 5 3 100 70 50 Common emitter 30 20 15 2 10 VCE = 2 V 4 IC – VBE IC (A) IC (A) Collector current Collector current 3 2 Ta = 100°C 25 −25 1 IB = 5 mA 1 0 0 Common emitter Ta = 25°C 1 2 3 4 0 0 0.4 0.8 1.2 1.6 2.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC Collector-emitter saturation voltage VCE (sat) (V) hFE 500 300 100 50 30 Common emitter 10 5 1m VCE = 2 V 3m 10 m 30 m 100 m 300 m 1 3 10 −25 Ta = 100°C 10 5 3 1 Common emitter IC/IB = 20 VCE (sat) – IC DC current gain 25 Collector current IC (A) 50 m 30 m 10 m 1m Ta = 100°C −25 3m 10 m 25 30 m 100 m 300 m 1 3 10 Collector current IC (A) Safe Operating Area 10 5 IC max (pulsed)* IC max (continuous) 1 ms* 10 ms* 100 ms* 1 0.5 0.3 0.1 0.05 0.03 0.01 0.03 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.3 1 3 DC operation Ta = 25°C 1 s* Base-emitter saturation voltage VBE (sat) (V) VBE (sat) – IC 10 5 3 1 500 m 300 m 100 m 1m Common emitter IC/IB = 20 Ta = −25°C 100 25 Collector current IC (A) 3 VCEO max 10 30 100 3m 10 m 30 m 100 m 300 m 1 3 10 Collector current IC (A) Collector-emitter voltage VCE (V) 3 2004-07-26 2SC4604 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-26
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