2SC4685

2SC4685 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4685 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • • • High DC current gain: hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) High collector power dissipation: PC = 10 W (Tc = 25°C), PC = 1.5 W (Ta = 25°C) Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulse (Note) Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rating 50 40 20 8 5 8 0.5 1.5 10 150 −55 to 150 A Unit V V V JEDEC JEITA TOSHIBA A W °C °C ― ― 2-8H1A Weight: 0.82 g (typ.) Note: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob Test Condition VCB = 50 V, IE = 0 VEB = 8 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 4 A IC = 4 A, IB = 40 mA VCE = 2 V, IC = 4 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 20 800 250 ― ― ― ― Typ. ― ― ― ― ― ― ― 150 45 Max 100 100 ― 3200 ― 0.5 1.2 ― ― V V MHz pF Unit nA nA V 1 2004-07-26 2SC4685 Marking Lot No. C4685 A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) 2 2004-07-26 2SC4685 IC – VCE 10 Common emitter 8 50 40 30 20 10 6 5 4 2 2 IB = 0.5 mA 0 0 0 0 Ta = 25°C 8 Common emitter VCE = 2 V IC – VBE IC (A) IC (A) Collector current 6 Collector current 4 Ta = 125°C 2 25 −40 1 2 3 4 5 6 0.2 0.4 0.6 0.8 1.0 1.2 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 10000 5 3 Common emitter 3000 Tc = 125°C 25 −40 VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) IC/IB = 200 1 hFE 1000 DC current gain 0.3 300 0.1 Tc = 125°C 100 0.03 −40 0.01 0.01 25 30 Common emitter VCE = 2 V 10 0.01 0.03 0.1 0.3 1 3 10 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Safe Operating Area 10 IC max (pulsed)** IC max (continuous) VBE (sat) – IC 10 5 Common emitter IC/IB = 200 3 VBE (sat) (V) 10 ms * 100 ms* Base-emitter saturation voltage Collector current 1 25 0.3 Tc = −40°C IC (A) 3 1 125 DC operation Tc = 25°C 0.5 *: Single nonrepetitive pulse 0.1 Tc = 25°C 0.3 **: Pulse width = 10 ms (max) Duty cycle = 30% (max) Tc = 25°C Curves must be derated linearly with increase in temperature. VCEO max 10 30 50 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 0.1 1 3 5 Collector current IC (A) Collector-emitter voltage VCE (V) 3 2004-07-26 2SC4685 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-26