2SC5000_04

2SC5000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A) Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 50 7 10 1 25 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-10R1A Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Saturation voltage Collector-emitter Base-emitter Symbol ICBO IEBO V (BR) CEO hFE (1) VCE (sat) VBE (sat) fT Cob Test Condition VCB = 70 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 1 A IC = 5 A, IB = 0.25 A IC = 5 A, IB = 0.25 A VCE = 1 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Weight: 1.7 g (typ.) Min ― ― 50 120 ― ― ― ― Typ. ― ― ― ― 0.19 0.96 90 90 Max 1 1 ― 400 0.4 1.4 ― ― Unit µA µA V V MHz pF Transition frequency Collector output capacitance Marking C5000 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-26 2SC5000 IC – VCE 10 80 8 70 20 60 50 40 6 30 20 16 Common emitter VCE = 1 V IC – VBE IC (A) IC (A) Collector current 12 Collector current 4 8 100 Tc = −25°C 2 IB = 10 mA Common emitter Tc = 25°C 4 25 0 0 2 4 6 8 10 0 0 0.4 0.8 1.2 1.6 2.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 1000 10 VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) 5 3 Common emitter IC/IB = 20 500 300 Tc = 100°C −25 hFE 100 50 30 25 1 0.5 0.3 Tc = 100°C 0.1 0.05 0.03 −25 25 DC current gain 10 5 3 Common emitter VCE = 1 V 0.1 1 10 30 1 0.01 0.01 0.01 0.1 1 10 30 Collector current IC (A) Collector current IC (A) Safe Operating Area 30 IC max (pulsed)* IC max (continuous) * 10 ms * 10 VBE (sat) – IC (A) 10 5 Common emitter IC/IB = 20 5 3 DC operation Tc = 25°C 1 ms * 100 µs * Base-emitter saturation voltage VBE (sat) (V) 3 Collector current IC 1 0.5 0.3 −25 25 Tc = 100°C 100 ms * 1 0.5 0.3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.05 0.03 VCEO max 10 30 50 100 0.01 0.01 0.1 1 10 30 0.1 1 3 5 Collector current IC (A) Collector-emitter voltage VCE (V) 2 2004-07-26 2SC5000 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 2004-07-26