2SC5028_04

2SC5028 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5028 Power Amplifier Applications Power Switching Applications Unit: mm • • • • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 1.3 W High-speed switching: tstg = 500 ns (typ.) Complementary to 2SA1891 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 50 6 2 0.2 1.3 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-8M1A Weight: 0.55 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 1.5 A IC = 1 A, IB = 0.05 A IC = 1 A, IB = 0.05 A VCE = 2 V, IC = 100 mA VCB = 10 V, IC = 0, f = 1 MHz Ootput 30 Ω Min ― ― 50 120 40 ― ― ― ― ― Typ. ― ― ― ― ― ― ― 100 14 0.1 Max 1.0 1.0 ― 400 ― 0.5 1.2 ― ― ― V V MHz pF Unit µA µA V 20 µs Input IB2 IB1 IB2 Switching time Storage time tstg ― 0.5 ― µs 30 V Fall time tf ― IB1 = −IB2 = 0.05 A, duty cycle ≤ 1% 0.1 ― 1 2004-07-26 2SC5028 Marking C5028 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-26 2SC5028 IC – VCE 2.0 50 100 1.6 30 20 15 1000 500 300 hFE – IC Ta = 100°C IC (A) hFE 10 100 50 30 10 5 3 Common emitter VCE = 2 V 1 0.001 0.003 0.01 0.03 0.1 0.3 1 3 5 −25 25 1.2 Collector current 0.8 6 4 0.4 IB = 2 mA Common emitter 1 2 3 Ta = 25°C 4 5 0 0 DC current gain Collector current IC (A) Collector-emitter voltage VCE (V) VCE (sat) – IC 3 VBE (sat) – IC 10 5 3 1 0.5 0.3 0.1 0.05 0.03 Common emitter IC/IB = 20 Collector-emitter saturation voltage VCE (sat) (V) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0.001 Ta = 100°C −25 25 Base-emitter saturation voltage VBE (sat) (V) 1 35 Common emitter IC/IB = 20 0.003 0.01 0.03 0.1 0.3 0.01 0.001 0.003 0.01 0.03 0.1 0.3 1 3 5 Collector current IC (A) Collector current IC (A) IC – VBE 2.0 Common emitter VCE = 2 V 1.6 IC (A) Collector current 1.2 0.8 Ta = 100°C 25 −25 0.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) 3 2004-07-26 2SC5028 rth – tw 1000 rth Transient thermal resistance 100 10 Curves should be applied in thermal limited area. (single nonrepetitive pulse) Ta = 25°C 1 1m 10 m 100 m 1 10 100 1000 (°C/W) Pulse width tw (s) Safe Operating Area 10 1.6 PC – Ta PC (W) Collector power dissipation 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 30 100 5 IC max (pulsed)* 3 IC max (continuous) 10 ms* 1 ms* IC (A) 1 0.5 0.3 DC operation Ta = 25°C 100 ms* Collector current 0.1 *: Single nonrepetitive pulse Ta = 25°C 0.03 Curves must be derated linearly with increase in temperature. 0.05 0.01 0.1 0.3 1 3 VCEO max 10 25 50 75 100 125 150 175 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) 4 2004-07-26 2SC5028 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-26