2SC5066-O,LF

2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Tstg −55 to 125 °C Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA SC-70 TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition Min Typ. Max Unit GHz VCE = 5 V, IC = 10 mA 5 7 ⎯ 2 VCE = 5 V, IC = 10 mA, f = 500 MHz ⎯ 17 ⎯ 2 VCE = 5 V, IC = 10 mA, f = 1 GHz 8.5 12 ⎯ NF (1) VCE = 5 V, IC = 3 mA, f = 500 MHz ⎯ 1 ⎯ NF (2) VCE = 5 V, IC = 3 mA, f = 1 GHz ⎯ 1.1 2.0 Min Typ. Max fT ⎪S21e⎪ (1) ⎪S21e⎪ (2) dB dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ⎯ ⎯ 1 μA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ⎯ ⎯ 1 μA VCE = 5 V, IC = 10 mA 80 ⎯ 240 ⎯ 0.7 ⎯ pF ⎯ 0.45 0.9 pF DC current gain hFE (Note 1) Output capacitance Cob Reverse transfer capacitance Cre VCB = 5 V, IE = 0, f = 1 MHz (Note 2) Note 1: hFE classification O: 80 to 160, Y: 120 to 240 Note 2: Cre is measured by 3 terminal method with capacitance bridge. 1 Start of commercial production 1993-07 2014-03-01 2SC5066 Marking 2 2014-03-01 2SC5066 3 2014-03-01 2SC5066 S-Parameter ZO = 50 Ω, Ta = 25°C VCE = 5 V, IC = 5 mA Frequency (MHz) S11 Mag. S21 S12 S22 Ang. Mag. Ang. Mag. Ang. Mag. Ang. 200 0.753 −43.7 10.247 140.6 0.040 65.6 0.827 −22.6 400 0.531 −75.1 7.684 117.1 0.060 57.1 0.648 −30.3 600 0.384 −96.4 5.815 103.0 0.074 56.1 0.551 −32.0 800 0.305 −112.6 4.523 93.6 0.086 57.0 0.500 −32.3 1000 0.255 −126.5 3.788 86.3 0.099 58.9 0.472 −32.4 1200 0.224 −138.4 3.244 80.7 0.112 60.2 0.455 −32.2 1400 0.203 −150.1 2.833 75.4 0.127 60.3 0.442 −32.6 1600 0.187 −159.4 2.529 70.6 0.139 60.0 0.434 −33.0 1800 0.174 −166.5 2.283 66.7 0.150 60.3 0.429 −32.6 2000 0.176 −171.2 2.107 63.0 0.164 59.2 0.428 −32.2 VCE = 5 V, IC = 10 mA Frequency S11 S21 S12 S22 (MHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. 200 0.591 −58.0 14.955 129.6 0.034 64.3 0.714 −27.5 400 0.367 −90.3 9.581 107.5 0.052 61.9 0.534 −30.8 600 0.260 −110.7 6.781 96.1 0.067 63.9 0.462 −30.1 800 0.209 −126.9 5.207 88.6 0.083 65.2 0.428 −29.2 1000 0.178 −141.8 4.269 82.5 0.100 66.4 0.412 −28.6 1200 0.160 −153.7 3.618 77.7 0.117 66.7 0.403 −28.3 1400 0.150 −166.3 3.152 72.7 0.135 65.4 0.398 −28.8 1600 0.141 −175.2 2.801 68.7 0.149 64.0 0.393 −29.4 1800 0.130 178.2 2.521 65.0 0.163 63.4 0.392 −29.0 2000 0.133 174.0 2.314 61.7 0.179 61.3 0.395 −28.6 4 2014-03-01 2SC5066 5 2014-03-01 2SC5066 6 2014-03-01 2SC5066 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. 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