2SC5087_07

2SC5087 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 VHF~UHF Band Low Noise Amplifier Applications • • Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 20 12 3 40 80 150 125 −55~125 Unit V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC JEITA TOSHIBA ― ― 2-3J1C Weight: 0.012 g (typ.) Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Insertion gain Symbol fT ⎪S21e⎪ (1) ⎪S21e⎪ (2) NF (1) NF (2) 2 2 Test Condition VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz Min 5 ⎯ 9.5 ⎯ ⎯ Typ. 7 18 13 1 1.1 Max ⎯ ⎯ ⎯ ⎯ 2 Unit GHz dB Noise figure dB Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance Symbol ICBO IEBO hFE (Note 1) Cob Cre Test Condition VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz (Note 2) Min ⎯ ⎯ 80 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1.1 0.65 Max 1 1 240 1.6 1.05 pF pF Unit μA μA Note 1: hFE classification O: 80~160, Y: 120~240 Note 2: Cre is measured by 3 terminal method with capacitance bridge. 1 2007-11-01 2SC5087 Marking 2 1 Type Name hFE Rank CO 3 4 2 2007-11-01 2SC5087 1000 (pF) hFE – IC VCE = 10 V Ta = 25°C Cob, Cre – VCB 10 f = 1 MHz 5 3 Ta = 25°C 500 300 200 OUTPUT CAPACITANSE Cob (pF) REVERSE TRANSFER CAPACITANCE Cre DC CURRENT GAIN hFE 2 Cob Cre 100 70 50 30 1 1 0.7 0.5 0.3 0.1 2 3 5 7 10 20 30 50 70 100 0.2 0.3 0.5 0.7 1 2 3 5 7 10 COLLECTOR CURRENT IC (mA) COLLECTOR-BASE VOLTAGE VCB (V) fT – IC 10 16 Ta = 25°C 8 ⎪S21e⎪ – IC (dB) VCE = 10 V f = 1 GHz Ta = 25°C 12 2 (GHz) VCE = 10 V TRANSITION FREQUENCY fT 6 ⎪S21e⎪ INSERTION GAIN 3 5 7 10 30 50 70 100 2 8 4 4 2 0 1 0 1 3 5 7 10 30 50 70 100 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) ⎪S21e⎪ – f 35 5 VCE = 10 V IC = 20 mA Ta = 25°C VCE = 10 V f = 1 GHz Ta = 25°C 2 NF – IC (dB) (dB) NF NOISE FIGURE 30 4 ⎪S21e⎪ 2 20 3 INSERTION GAIN 2 10 1 0 0.1 0.3 0.5 0.7 0 3 5 7 10 0 1 3 5 7 10 30 50 70 100 FREQUENCY f (GHz) COLLECTOR CURRENT IC (mA) 3 2007-11-01 2SC5087 ⎪S21e⎪ – VCE (dB) 14 12 10 8 6 4 2 0 0 IC = 20 mA f = 1 GHz Ta = 25°C 2 4 6 8 10 12 2 PC – Ta (mW) COLLECTOR POWER DISSIPATION 200 16 ⎪S21e⎪ PC 160 2 120 INSERTION GAIN 80 40 0 0 25 50 75 100 125 150 COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPERATURE Ta (°C) S-Parameter ZO = 50 Ω, Ta = 25°C S11 Mag. 0.793 0.736 0.719 0.701 0.698 0.697 0.699 0.703 0.713 0.722 Ang. −82.4 −128.0 −152.1 −168.6 178.9 168.3 159.4 150.8 142.9 134.7 Mag. 11.923 7.835 5.578 4.279 3.451 2.855 2.440 2.121 1.876 1.681 S21 Ang. 133.4 108.5 94.5 84.4 76.6 69.9 64.0 59.3 54.5 50.3 Mag. 0.050 0.066 0.071 0.073 0.074 0.076 0.078 0.084 0.091 0.100 S12 Ang. 52.7 38.0 34.1 33.9 36.7 40.8 46.6 52.5 58.3 63.5 Mag. 0.788 0.584 0.490 0.445 0.424 0.413 0.404 0.401 0.398 0.398 S22 Ang. −36.4 −53.4 −63.5 −72.2 −80.5 −88.9 −97.3 −105.4 −112.6 −119.6 VCE = 10 V, IC = 5 mA Frequency MHz 200 400 600 800 1000 1200 1400 1600 1800 2000 VCE = 10 V, IC = 20 mA Frequency MHz 200 400 600 800 1000 1200 1400 1600 1800 2000 Mag. 0.655 0.650 0.660 0.666 0.667 0.668 0.677 0.676 0.688 0.690 S11 Ang. −129.4 −161.5 −176.3 172.8 164.0 156.8 148.4 141.1 133.9 126.7 Mag. 20.724 11.288 7.643 5.758 4.605 3.809 3.277 2.862 2.559 2.303 S21 Ang. 113.2 95.5 86.4 79.6 74.2 69.3 65.1 61.2 57.5 54.1 Mag. 0.031 0.040 0.049 0.059 0.070 0.080 0.091 0.104 0.117 0.131 S12 Ang. 48.0 50.4 56.4 60.0 63.6 65.9 68.2 70.0 71.2 72.4 Mag. 0.496 0.319 0.263 0.242 0.233 0.229 0.226 0.223 0.220 0.217 S22 Ang. −59.6 −74.1 −83.5 −92.9 −102.0 −111.0 −119.1 −126.5 −132.4 −137.8 4 2007-11-01 2SC5087 S11e VCE = 10 V IC = 5 mA Ta = 25°C (Unit: Ω) j25 2.0 j10 1.6 1.2 0 0.8 10 25 50 100 250 ±180° 16 12 8 4 S21e VCE = 10 V IC = 5 mA Ta = 25°C j50 120° j100 j150 j250 16 150° 12 f = 0.2 GHz 0.4 30° 8 2 90° 60° 0.8 1.2 1.6 2.0 0 0° −j10 0.4 f = 0.2 GHz −j25 −j50 −j100 −j250 −150° −j150 −30° −120° −90° −60° S12e VCE = 10 V IC = 5 mA Ta = 25°C 120° 90° 0.20 0.16 150° 0.12 2.0 0.08 1.6 f = 0.2 GHz 1.2 0.04 0.8 0.4 ±180°0.20 0.16 0.12 0.08 0.04 0 30° 60° S22e VCE = 10 V IC = 5 mA Ta = 25°C (Unit: Ω) j25 j50 j100 j150 j10 j250 0° 0 10 25 50 100 250 2.0 −150° −30° −j10 1.6 1.2 0.8 0.4 f = 0.2 GHz −j250 −j150 −120° −90° −60° −j25 −j50 −j100 5 2007-11-01 2SC5087 S11e VCE = 10 V IC = 20 mA Ta = 25°C (Unit: Ω) j25 S21e VCE = 10 V IC = 20 mA Ta = 25°C j50 120° j100 2.0 j150 j250 f = 0.2 GHz 150° 0.4 20 15 30° 10 0.8 1.2 5 1.6 2.0 0 90° 60° j10 1.6 1.2 0.8 0 0.4 −j10 10 25 50 100 250 ±180° 20 15 10 5 0° −j250 f = 0.2 GHz −j150 −j25 −j50 −j100 −120° −90° −150° −30° −60° S12e VCE = 10 V IC = 20 mA Ta = 25°C 120° 90° 0.20 0.16 2.0 150° 0.12 1.6 0.08 0.04 0.4 ±180°0.20 0.16 0.12 0.08 0.04 1.2 0.8 0° 30° 60° S22e VCE = 10 V IC = 20 mA Ta = 25°C (Unit: Ω) j25 j50 j100 j150 j10 j250 f = 0.2 GHz 0 0 10 25 2.0 1.2 50 1.6 0.8 100 250 −150° −30° −j10 0.4 f = 0.2 GHz −j250 −j150 −120° −90° −60° −j25 −j50 −j100 6 2007-11-01 2SC5087 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-11-01