2SC5090
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5090
VHF~UHF Band Low Noise Amplifier Applications
• • Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 20 10 1.5 20 40 100 125 −55~125 Unit V V V mA mA mW °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC JEITA TOSHIBA
― SC-70 2-2E1A
Weight: 0.006 g (typ.)
Microwave Characteristics (Ta = 25°C)
Characteristics Transition frequency Insertion gain Symbol fT ⎪S21e⎪ (1) ⎪S21e⎪ (2) NF (1) NF (2)
2 2
Test Condition VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA, f = 1 GHz VCE = 8 V, IC = 20 mA, f = 2 GHz VCE = 8 V, IC = 5 mA, f = 1 GHz VCE = 8 V, IC = 5 mA, f = 2 GHz
Min 7 10 ⎯ ⎯ ⎯
Typ. 10 13 7 1.1 1.7
Max ⎯ ⎯ ⎯ 2.5 ⎯
Unit GHz dB
Noise figure
dB
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance Symbol ICBO IEBO hFE (Note 1) Cob Cre Test Condition VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz (Note 2) Min ⎯ ⎯ 50 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 0.7 0.5 Max 1 1 160 ⎯ 0.95 pF pF Unit μA μA
Note 1: hFE classification R: 50~100, O: 80~160 Note 2: Cre is measured by 3 terminal method with capacitance bridge.
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Marking
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S-Parameter
Frequency (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000
ZO = 50 Ω, Ta = 25°C
S11 Mag. 0.683 0.462 0.343 0.282 0.249 0.236 0.233 0.234 0.238 0.251 Ang. −50.1 −86.9 −113.1 −133.6 −151.0 −166.6 179.7 168.3 158.6 149.6 Mag. 10.186 7.472 5.618 4.407 3.663 3.128 2.759 2.457 2.224 2.038 S21 Ang. 138.3 114.6 100.9 91.7 84.7 78.7 73.1 68.2 63.4 59.4 Mag. 0.049 0.071 0.086 0.101 0.115 0.131 0.150 0.168 0.185 0.203 S12 Ang. 62.0 54.3 53.8 55.3 57.2 58.9 60.1 60.0 60.0 60.4 Mag. 0.773 0.556 0.448 0.392 0.360 0.339 0.330 0.319 0.311 0.302 S22 Ang. −30.0 −39.6 −41.7 −41.6 −41.7 −41.7 −42.8 −45.0 −47.9 −50.2
VCE = 8 V, IC = 5 mA
VCE = 8 V, IC = 20 mA
Frequency (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 Mag. 0.319 0.213 0.185 0.176 0.174 0.178 0.186 0.194 0.199 0.215 S11 Ang. −91.9 −134.2 −160.0 −178.2 167.8 156.8 147.5 139.7 133.7 127.8 Mag. 18.338 10.303 7.111 5.415 4.400 3.712 3.236 2.874 2.583 2.369 S21 Ang. 116.7 99.2 90.3 84.3 79.2 74.8 70.3 66.3 62.6 58.8 Mag. 0.033 0.054 0.076 0.098 0.120 0.143 0.168 0.190 0.211 0.232 S12 Ang. 65.3 68.9 70.8 71.2 71.1 70.3 68.7 66.6 64.9 63.5 Mag. 0.494 0.312 0.258 0.236 0.228 0.226 0.226 0.223 0.216 0.211 S22 Ang. −43.5 −42.4 −37.6 −34.3 −32.0 −31.5 −32.8 −35.9 −39.0 −41.9
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RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN GENERAL
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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