2SC5122

2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications Unit: mm • • High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 400 400 7 50 100 25 900 150 −55 to 150 Unit V V V mA mA mW °C °C JEDEC JEITA TO-92MOD ― TOSHIBA 2-5J1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.36 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 2SC5122 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE Cob Test Condition VCB = 400 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 20 mA IC = 20 mA, IB = 0.5 mA VCE = 5 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 400 80 100 ― ― ― Typ. ― ― ― ― ― 0.4 0.7 4 Max 1 1 ― ― 300 1.0 1.0 ― V V pF Unit μA μA V Marking C5122 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-10 2SC5122 IC – VCE 50 Common emitter Ta = 25°C 100 1 mA 900 800 700 600 500 hFE – IC Common emitter VCE = 10 V 30 Tc = 100°C 25 10 −25 40 400 300 Collector current IC 30 200 DC current gain hFE (mA) 3 20 100 10 IB = 50 μA 0 2 4 6 8 10 1 0.1 1 10 100 Collector current IC (mA) Collector-emitter voltage VCE (V) VCE (sat) – IC 280 Common emitter 60 IC – VBE Common emitter 50 VCE = 10 V Collector-emitter saturation voltage VCE (sat) (mV) 240 200 160 IC/IB = 5 (mA) Tc = 100°C Collector current IC 40 30 120 80 40 0 0 25 20 −25 10 Tc = 100°C 25 −25 10 20 30 40 50 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector current IC (mA) Base-emitter voltage VBE (V) Safe Operating Area PC – Ta 1.0 500 300 IC max (pulsed)* IC max (continuous) 1 ms* DC operation Ta = 25°C 100 ms* 10 ms* (mA) 0.8 (mA) 100 50 30 100 μs* Collector current IC 0.6 Collector current IC 10 5 3 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated 1 linearly with increase in temperature. 1 3 10 0.4 0.2 VCEO max 30 100 300 1000 0 0 40 80 120 160 200 240 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) 3 2006-11-10 2SC5122 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2006-11-10