2SC5173_04

2SC5173 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5173 High-Voltage Switching and Amplifier Applications Color TV Horizontal Driver Applications Color TV Chroma Output Applications Unit: mm • • • High breakdown voltage: VCEO = 300 V Small collector output capacitance: Cob = 3.0 pF (typ.) Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 300 300 7 100 50 1.8 150 −55 to 150 Unit V V V mA mA W °C °C JEDEC JEITA TOSHIBA ― ― 2-10T1A Weight: 1.5 g (typ.) Electrical Characteristics (Ta = 25°C unless otherwise noted.) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob Test Condition VCB = 240 V, IE = 0 VEB = 7 V, IC = 0 VCE = 10 V, IC = 4 mA VCE = 10 V, IC = 20 mA IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz Min ― ― 20 30 ― ― 50 ― Typ. ― ― ― ― ― ― 70 3.0 Max 1.0 1.0 ― 200 1.0 1.0 ― ― V V MHz pF Unit µA µA Marking C5173 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-26 2SC5173 IC – VCE 120 Common emitter 100 6 Ta = 25°C 4 3 2 500 300 hFE – IC Common emitter Ta = 25°C (mA) hFE DC current gain Collector current IC 80 1 60 0.6 0.4 IB = 0.2 mA 100 50 30 VCE = 20 V 10 5 40 20 10 0.3 1 3 10 30 100 Collector current 0 0 4 8 12 16 20 24 IC (mA) Collector-emitter voltage VCE (V) hFE – IC 500 300 5 VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter VCE = 10 V 3 Common emitter Ta = 25°C hFE DC current gain 100 50 30 Ta = 100°C 1 0.5 0.3 IC/IB = 10 0.1 0.05 0.3 2 5 25 −25 10 0.3 1 3 10 30 100 Collector current IC (mA) 1 3 10 30 100 Collector current IC (mA) VCE (sat) – IC 5 Collector-emitter saturation voltage VCE (sat) (V) 3 Common emitter IC/IB = 5 5 VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) 3 Common emitter IC/IB = 5 Ta = 25°C 1 0.5 0.3 1 0.5 0.3 Ta = 100°C 0.1 −25 0.05 0.3 1 3 10 25 30 100 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) 2 2004-07-26 2SC5173 IC – VBE (MHz) 100 Common emitter VCE = 10 V 80 500 300 fT – IC Common emitter Ta = 25°C (mA) fT 100 50 30 Collector current IC 60 Ta = 100°C 40 25 −25 Transition frequency VCE = 20 V 5 10 20 10 0.3 1 3 10 30 100 Collector current 0 0.2 0.4 0.6 0.8 1.0 1.2 IC (mA) Base-emitter voltage VBE (V) Cob – VCB 50 rth – tw Transient thermal resistance rth (°C/W) IE = 0 f = 1 MHz Ta = 25°C 100 50 30 10 5 3 1 0.5 0.3 0.1 0.001 0.01 Curves should be applied in thermal limited area. (single nonrepetitive pulse) Ta = 25°C 0.1 1 10 100 1000 Collector output capacitance Cob (pF) 30 10 5 3 Pulse width 1 1 3 10 30 100 300 tw (s) Collector-base voltage VCB (V) PC – Ta 2.0 300 (W) Collector power dissipation PC 300 µs* 1.6 1.2 500 ms* 0.8 0.4 VCEO max Safe Operating Area IC max (pulsed)* IC max (continuous) DC operation Ta = 25°C 1 ms 10 ms* 100 ms* IC (mA) Collector current 100 50 30 *: Single nonrepetitive pulse 10 5 3 1 Ta = 25°C Curves must be derated linearly with increase in temperature. 3 5 10 30 50 100 300 500 0 0 25 50 75 100 125 150 175 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 3 2004-07-26 2SC5173 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-26