2SC5176

2SC5176 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5176 High-Current Switching Applications DC-DC Converter Applications Unit: mm • • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) High-speed switching: tstg = 1.0 µs (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 100 80 7 5 8 1 1.8 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-10T1A Weight: 1.5 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton 20 µs IB1 Switching time Storage time tstg Input Test Condition VCB = 100 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 1 A VCE = 1 V, IC = 3 A IC = 3 A, IB = 0.15 A IC = 3 A, IB = 0.15 A VCE = 4 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Output 10 Ω Min ― ― 80 70 40 ― ― ― ― ― Typ. ― ― ― ― ― 0.2 0.9 120 80 0.2 Max 1 1 ― 240 ― 0.4 1.2 ― ― ― V V MHz pF Unit µA µA V IB1 IB2 IB2 ― 1.0 ― µs VCC ≈ 30 V Fall time tf IB1 = −IB2 = 0.15 A, duty cycle ≤ 1% ― 0.1 ― 1 2004-07-26 2SC5176 Marking C5176 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-26 2SC5176 IC – VCE (V) 5 100 90 80 70 60 50 Common emitter Ta = 25°C 0.8 Common emitter Ta = 100°C 0.6 VCE – IC 40 60 IC (A) 4 40 VCE IB = 20 mA 80 Collector current 3 30 Collector-emitter voltage 0.4 20 2 IB = 10 mA 1 0.2 140 100 0 0 2 4 6 8 10 12 14 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector current IC (A) VCE – IC 0.8 0.8 VCE – IC (V) 40 60 80 IB = 20 mA 0.6 40 60 80 100 (V) IB = 20 mA 0.6 VCE Collector-emitter voltage Collector-emitter voltage VCE 140 0.4 0.4 100 140 0.2 Common emitter Ta = 25°C 0 0 1 2 3 4 5 0.2 Common emitter Ta = −55°C 0 0 1 2 3 4 5 Collector current IC (A) Collector current IC (A) hFE – IC 1000 VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.003 Ta = −55°C 100 25 0.01 0.1 0.3 1 3 10 Common emitter IC/IB = 20 500 300 hFE Ta = 100°C 25 −55 DC current gain 100 50 30 10 5 2 0.003 Common emitter VCE = 1 V 0.01 0.03 0.1 0.3 1 3 10 0.03 Collector current IC (A) Collector current IC (A) 3 2004-07-26 2SC5176 VBE (sat) – IC 30 5 Common emitter 10 5 3 Ta = −55°C IC/IB = 20 4 Common emitter VCE = 1 V IC – VBE Base-emitter saturation voltage VBE (sat) (V) IC (A) Collector current 100 3 1 0.5 0.3 25 2 Ta = 100°C 25 −55 0.1 0.003 0.01 0.03 0.1 0.3 1 3 10 1 Collector current IC (A) 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base-emitter voltage VBE (V) rth – tw Transient thermal resistance rth (°C/W) 100 50 30 10 5 3 1 0.5 0.3 0.1 0.001 Curves should be applied in thermal limited area. (single nonrepetitive pulse) No heat sink Ta = 25°C 0.01 0.1 1 10 100 1000 10 5 Safe Operating Area IC max (pulsed)* IC max (continuous) 100 µs* 1 ms* DC operation Ta = 25°C 10 ms* 10 µs* IC (A) Collector current 3 1 0.5 0.3 Pulse width tw (s) 0.1 0.05 0.03 *: Single nonrepetitive pulse Ta = 25°C Curves must be dated linearly with increase in temperature. 1 10 0.01 0.1 VCEO max 100 Collector-emitter voltage VCE (V) PC – Ta 2.0 PC (W) Collector power dissipation 1.6 1.2 0.8 0.4 0 0 25 50 75 100 125 150 175 Ambient temperature Ta (°C) 4 2004-07-26 2SC5176 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-26