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2SC5355_05

2SC5355_05

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    2SC5355_05 - High Voltage Switching Applications - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
2SC5355_05 数据手册
2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • • • Excellent switching times: tr = 0.5 µs (max), tf = 0.3 µs (max) High collector breakdown voltage: VCEO = 400 V High DC current gain: hFE = 20 (min) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 400 7 5 7 1 1.5 25 150 −55~150 Unit V V V A A JEDEC W °C °C ― ― 2-7B5A JEITA TOSHIBA Weight: 0.36 g (typ.) JEDEC JEITA TOSHIBA ― ― 2-7B7A Weight: 0.36 g (typ.) 1 2005-02-01 2SC5355 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr Test Condition VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.5 A IC = 2 A, IB = 0.25 A IC = 2 A, IB = 0.25 A OUTPUT 100 Ω Min ― ― 600 400 12 20 ― ― ― Typ. ― ― ― ― ― ― ― ― ― Max 100 10 ― ― ― 65 1.0 1.3 0.5 V V Unit µA µA V V 20 µs INPUT IB1 IB2 IB1 IB2 Switching time Storage time tstg ― VCC ≈ 200 V ― 2.0 µs Fall time tf IB1 = 0.25 A, IB2 = −0.5 A DUTY CYCLE ≤ 1% ― ― 0.3 Marking C5355 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-01 2SC5355 IC – VCE 5 Common emitter Tc = 25°C 4 300 3 200 500 400 4 5 Common emitter VCE = 5 V IC – VBE Collector current IC (A) IC (A) Collector current 3 100 2 50 1 IB = 20 mA 2 Tc = 100°C 1 25 −40 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 100 30 Tc = 100°C 25 −40 10 Common emitter IC/IB = 5 10 VCE (sat) – IC Tc = 100°C hFE Collector-emitter saturation voltage VCE (sat) (V) DC current gain 3 −40 1 25 Common emitter VCE = 5 V 3 0.01 0.1 1 10 Collector current IC (A) 0.3 −1000 0.01 0.1 1 10 Collector current IC (A) Safe Operating Area 10 IC max (pulse)* 1 ms* 3 IC max (continuous) 1 DC operation Tc = 25°C 0.3 10 µs* 100 µs* 10 ms* 100 ms* Collector current IC (A) 0.1 *: Single nonrepetitive 0.03 pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 10 VCEO max 100 1000 0.01 2 Collector-emitter voltage VCE (V) 3 2005-02-01 2SC5355 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2005-02-01
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