2SC5361

2SC5361 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5361 High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • • • Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A) High breakdown voltage: VCEO = 800 V High DC current gain: hFE = 15 (min) (IC = 0.15 A) Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 900 800 7 3 5 1 1.5 40 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-10S1A Weight: 1.5 g (typ.) 1 2004-07-26 2SC5361 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr Test Condition VCB = 720 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.15 A IC = 1.2 A, IB = 0.24 A IC = 1.2 A, IB = 0.24 A Min ― ― 900 800 10 15 ― ― Typ. ― ― ― ― ― ― ― ― Max 100 10 ― ― ― ― 1.0 1.3 V V Unit µA mA V V Rise time IB1 VCC ≈ 360 V 20 µs IC IB1 Input IB2 IB2 ― 300 Ω ― 0.7 Switching time Storage time tstg Output ― ― 4.0 µs Fall time tf IB1 = 0.24 A, IB2 = −0.48 A, duty cycle ≤ 1% ― ― 0.5 Marking C5361 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-26 2SC5361 IC – VCE Common emitter Tc = 25°C 3 Common emitter 1.0 VCE = 5 V IC – VBE 3 IC (A) 0.6 0.5 2 0.4 0.3 0.2 1 0.1 0.05 IB = 0.02 A 0 0 2 4 6 8 10 IC (A) Collector current 0.8 2 Collector current 1 Tc = 100°C 25 −55 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 1000 10 VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter IC/IB = 5 hFE DC current gain 100 Tc = 100°C 25 10 −55 Common emitter VCE = 5 V 1 0.001 0.01 0.1 1 10 1 Tc = 100°C 0.1 0.05 0.01 25 −55 0.1 1 10 Collector current IC (A) Collector current IC (A) VBE (sat) – IC 10 10 Common emitter IC/IB = 5 Switching Characteristics IC = 5IB1, 2IB1 = −IB2, Pulse width = 20 µs Duty cycle ≤ 1% Tc = 25°C tf tr Base-emitter saturation voltage VBE (sat) (V) (µs) tstg 1 −55 25 Switching time 1 Tc = 100°C 0.1 0.01 0.1 1 10 0.1 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) 3 2004-07-26 2SC5361 Safe Operating Area 10 60 PC – Ta (mW) (1) Tc = Ta Infinite heat sink (2) No heat sink IC max (pulsed)* IC max (continuous) 10 ms* 1 ms* 10 µs* PC Collector power dissipation 40 (1) 20 1 (A) 100 ms* Collector current IC 0.1 DC operation Tc = 25°C (2) 0 0 40 80 120 160 200 0.01 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.001 1 3 5 10 30 50 10 VCEO max 300 500 1000 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) 4 2004-07-26 2SC5361 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-26