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2SC5376FV

2SC5376FV

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    2SC5376FV - Audio Frequency General Purpose Amplifier Applications - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
2SC5376FV 数据手册
2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 0.13±0.05 Unit: mm • • Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA 0.8±0.05 1.2±0.05 0.4 0.4 High Collector Current: IC = 400 mA (max) 1 2 3 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 15 12 5 400 50 150 * 150 −55~150 Unit V V V mA mA mW °C °C 0.5±0.05 VESM 1.BASE 2.EMITTER 3.COLLECTOR JEDEC JEITA TOSHIBA ― ― 2-1L1A * : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt) Weight: 0.0015g (typ.) 0.5mm 0.45mm 0.45mm 0.4mm Marking Type Name hFE Classification FA 1 2004-06-07 2SC5376FV Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Symbol ICBO IEBO hFE (Note) VCE (sat) (1) VCE (sat) (2) VBE (sat) fT Cob Ron ton 0V Switching time Storage time tstg INPUT 300 Ω 10 µs 600 Ω 50 Ω Test Condition VCB = 15 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 10 mA IC = 10 mA, IB = 0.5 mA IC = 200 mA, IB = 10 mA IC = 200 mA, IB = 10 mA VCE = 2 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz IB = 1 mA, Vin = 1 Vrms, f = 1 kHz OUTPUT 60 Ω Min ⎯ ⎯ 300 ⎯ ⎯ ⎯ 80 ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 15 110 0.87 130 4.2 0.9 85 Max 0.1 0.1 1000 30 250 1.2 ⎯ ⎯ ⎯ ⎯ mV mV V MHz pF Ω ns Unit µA µA Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Collector-emitter on resistance Turn-on time VCC = 6 V ⎯ 170 ⎯ ns VBB = −3 V Falll time tf Duty Cycle < 2% = IB1 = −IB2 = 5 mA ⎯ 40 ⎯ ns Note: hFE Classification A: 300 ~ 600, B: 500 ~ 1000 2 2004-06-07 2SC5376FV IC – VCE 1.0 Common emitter Ta = 25°C 0.8 10000 5000 3000 hFE – IC Common emitter VCE = 2 V (A) 5 4 3 2 hFE 6 0.6 Collector current IC 1000 500 300 Ta = 100°C 25 −25 0.4 1 0.2 IB = 0.5 mA 0 0 DC current gain 5 100 50 30 1 2 3 4 10 0.1 0.3 1 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) Collector current IC (mA) VCE (sat) – IC 1000 Common emitter 500 IC/IB = 20 300 50 30 Common emitter IC/IB = 20 Ta = 25°C VBE (sat) – IC Collector-emitter saturation voltage VCE (sat) (mV) Base-emitter saturation voltage VBE (sat) (V) 100 300 10 5 3 100 50 30 Ta = 100°C −25 25 10 5 3 1 0.5 0.3 1 0.1 0.3 1 3 10 30 1000 0.1 0.1 0.3 1 3 10 30 100 300 500 Collector current IC (mA) Collector current IC (mA) IC – VBE 1000 500 300 VCE = 2V 100 Cob – VCB IE = 0 A f = 1 MHz Ta = 25°C (pF) Cob Collector output capacitance Common emitter 50 30 IC (mA) Collector current 100 50 30 Ta = 100°C 25 −25 10 5 3 10 5 3 1 0.0 0.4 0.8 1.2 1.6 1 0.1 0.3 1 3 10 30 100 Base-emitter voltage VBE (V) Collector-base voltage VCB (V) 3 2004-06-07 2SC5376FV PC – Ta (mW) 200 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt) 150 COLLECTOR POWER DISSIPATION PC 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta (°C) 4 2004-06-07 2SC5376FV RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-06-07
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