2SC5458_05

2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications • • Excellent switching times: tr = 0.5 µs (max) tf = 0.3 µs (max) (IC = 0.4 A) High collector breakdown voltage: VCEO = 400 V Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 400 7 0.8 1.5 0.5 1.0 10 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-7B1A Weight: 0.36 g (typ.) JEDEC JEITA TOSHIBA ― ― 2-7J1A Weight: 0.36 g (typ.) 1 2005-02-01 2SC5458 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Turn-on time Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) tr Test Condition VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.1 A IC = 0.3 A, IB = 0.04 A IC = 0.3 A, IB = 0.04 A OUTPUT 600 Ω Min ― ― 600 400 20 30 ― ― ― Typ. ― ― ― ― ― ― ― ― ― Max 100 100 ― ― ― 80 1.0 1.3 0.5 V V Unit µA µA V V 20 µs INPUT IB1 IB1 IB2 Switching time Storage time tstg IB2 ― ― 2.0 µs VCC ≈ 240 V Fall time tf IB1 = 50 mA, IB2 = −100 mA DUTY CYCLE ≤ 1% ― ― 0.3 Marking C5458 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-01 2SC5458 IC – VCE 1000 Common emitter Tc = 25°C 800 100 80 60 40 30 400 20 10 200 IB = 5 mA 100 300 hFE – IC (mA) hFE Tc = 100°C Collector current IC DC current gain 600 30 25 −55 10 3 Common emitter VCE = 5 V 0 0 1 1 2 4 6 8 10 3 10 30 100 300 1000 Collector current IC (mA) Collector-emitter voltage VCE (V) IC – VBE 1000 Common emitter 300 VCE = 5 V 800 Common emitter VCE = 5 V IC – VBE (mA) (mA) Collector current IC 100 30 10 600 Collector current IC 400 200 Tc = 100°C 25 −55 3 Tc = 100°C 25 −55 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) VBE (sat) – IC 10 Common emitter 10 VBE (sat) – IC Common emitter IC/IB = 10 Base-emitter saturation voltage VBE (sat) (V) Base-emitter saturation voltage VBE (sat) (V) IC/IB = 5 3 25 3 1 25 −55 1 −55 0.3 Tc = 100°C 0.3 Tc = 100°C 0.1 0.05 1 0.1 0.05 1 3 10 30 100 300 1000 3 10 30 100 300 1000 Collector current IC (mA) Collector current IC (mA) 3 2005-02-01 2SC5458 VCE (sat) – IC 10 Common emitter 3 Common emitter VCE (sat) – IC IC/IB = 5 Collector-emitter saturation voltage VCE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) IC/IB = 10 3 1 1 0.3 25 0.1 Tc = 100°C −55 0.3 Tc = 100°C −55 25 0.1 0.3 0.03 1 3 10 30 100 300 1000 0.01 1 3 10 30 100 300 1000 Collector current IC (mA) Collector current IC (mA) Safe Operating Area 3 IC max (pulsed)* 1 ms* 100 µs* (A) 1 IC max (continuous) DC operation Tc = 25°C 10 µs* Collector current IC 0.3 10 ms* 0.1 100 ms* *: Single nonrepetitive pulse Tc = 25°C 0.03 Curves must be derated linearly with increase in temperature. 0.01 10 1 3 30 VCEO max 100 300 1000 Collector-emitter voltage VCE (V) 4 2005-02-01 2SC5458 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2005-02-01