2SC5460

2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 800 V Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 800 800 5 50 25 1.5 10 150 −55 to 150 Unit V V V mA mA W °C °C JEDEC JEITA TOSHIBA ― ― 2-8H1A Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob Test Condition VCB = 640 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 7 mA IC = 20 mA, IB = 4 mA IC = 20 mA, IB = 4 mA VCE = 10 V, IC = 3 mA VCB = 100 V, f = 1 MHz Weight: 0.82 g (typ.) Min ― ― 15 ― ― ― ― Typ. ― ― ― ― ― 5.5 2.2 Max 1.0 10 ― 1.0 1.5 ― ― V V MHz pF Unit µA µA Note: When an external heat sink is used for the device, insulate using, for example, silicone rubber. When an external heat sink is not used, Toshiba recommends that the plastic part be at least 2 mm away from its surroundings. 1 2004-07-26 2SC5460 Marking Lot No. C5460 A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) 2 2004-07-26 2SC5460 IC – VCE 100 Common emitter Tc = 25°C 80 10 9 100 8 7 6 5 60 4 3 40 2 Common emitter Tc = 25°C 80 IC – VBE (mA) Collector current IC Collector current IC (mA) 60 40 Tc = 100°C 20 25 −55 1 20 IB = 0.5 mA 0 0 4 8 12 16 20 24 0 0 0.2 0.4 0.6 0.8 1 1.2 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE (sat) – IC 10 Common emitter 10 Common emitter VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) 3 Base-emitter saturation voltage VBE (sat) (V) IC/IB = 5 IC/IB = 5 3 25 1 1 −55 0.3 Tc = 100°C −55 0.1 25 0.3 Tc = 100°C 0.1 0.03 0.1 0.3 1 3 10 30 100 0.03 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) hFE – IC 1000 30 Cob – VCB Tc = 25°C Collector output capacitance Cob (pF) IE = 0 f = 1MHz 10 hFE DC current gain 100 Tc = 100°C 25 10 Common emitter VCE = 5 V 1 0.01 0.1 1 10 1000 −55 5 3 1 1 3 10 30 100 Collector current IC (mA) Collector-base voltage VCB (V) 3 2004-07-26 2SC5460 Safe Operating Area 300 100 IC max (pulsed)* 10 ms* 1 ms* IC (mA) 50 30 IC max (continuous) Collector current DC operation Tc = 25°C 10 5 3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 1 10 30 50 100 300 500 1000 VCEO max Collector-emitter voltage VCE (V) 4 2004-07-26 2SC5460 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-26