2SC5548

2SC5548 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • • • High speed switching: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.8 A) High collector breakdown voltage: VCEO = 370 V High DC current gain: hFE = 60 (min) (IC = 0.2 A) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 370 7 2 4 0.5 1.0 15 150 −55 to 150 Unit V V V A A JEDEC W °C °C ― ― 2-7B1A JEITA TOSHIBA Weight: 0.36 g (typ.) JEDEC JEITA TOSHIBA ― ― 2-7J1A Weight: 0.36 g (typ.) 1 2005-02-01 2SC5548 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr IB1 Test Condition VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.2 A IC = 0.8 A, IB = 0.1 A IC = 0.8 A, IB = 0.1 A 20 µs VCC ≈ 200 V IB1 IB21 IC 250 Ω Min ― ― 600 370 50 60 ― ― Typ. ― ― ― ― ― ― ― ― Max 20 10 ― ― 120 120 1.0 1.3 V V Unit µA µA V V Rise time ― ― 0.5 Switching time Storage time tstg IB2 INPUT OUTPUT ― ― 3.0 µs Fall time tf IB1 = 0.1 A, IB2 = −0.2 A DUTY CYCLE ≤ 1% ― ― 0.3 Marking C5548 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-02-01 2SC5548 IC – VCE 2.0 200 1.6 150 100 300 1000 hFE – IC Collector current IC (A) hFE 80 1.2 60 40 0.8 20 IB = 10 mA 0.4 Common emitter Tc = 25°C 0 0 2 4 6 8 10 100 Tc = 100°C 25 DC current gain 30 −55 10 3 1 0.001 Common emitter VCE = 5 V 0.003 0.01 0.03 0.1 0.3 1 3 Collector-emitter voltage VCE (V) Collector current IC (A) VCE (sat) – IC 10 Common emitter 10 VBE (sat) – IC Common emitter Collector-emitter saturation voltage VCE (sat) (V) 3 IC/IB = 8 Base-emitter saturation voltage VBE (sat) (V) IC/IB = 8 3 1 Tc = 100°C 1 25 −55 0.3 25 −55 Tc = 100°C 0.3 0.1 0.03 0.01 0.03 0.1 0.3 1 3 10 0.1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Collector current IC (A) IC – VBE 2.0 Common emitter VCE = 5 V 20 PC – Ta PC (W) (1) Tc = Ta infinite heat sink (2) No heat sink (1) IC (A) 1.6 16 1.2 Collector power dissipation 12 Collector current 0.8 8 0.4 Tc = 100°C 0 0 25 −55 4 (2) 0 0 25 50 75 100 125 150 175 200 0.4 0.8 1.2 1.6 Base-emitter voltage VBE (V) Ambient temperature Ta (°C) 3 2005-02-01 2SC5548 rth – tw (°C/W) 300 (2) 100 50 30 (1) Transient thermal resistance rth 10 5 3 Curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 0.01 0.1 1 10 100 1000 1 0.5 0.001 Pulse width tw (s) Safe Operating Area 10 5 IC max (pulsed)* 100 µs* 3 10 µs* 1 ms* 5 Switching Characteristics – IC IC = 8IB1 2IB1 = − IB2 VCC ≈ 200 V Pulse width = 20µs Duty cycle ≤ 1％ Tc = 25°C 3 IC max (continuous) 1 tstg (µs) Collector current IC (A) 0.5 0.3 DC operation Tc = 25°C 10 ms* Switching time 1 0.5 0.3 0.1 0.05 0.03 100 ms* tf 0.1 0.1 0.3 0.5 1 3 5 10 0.01 0.005 *: Single nonrepetitive pulse Tc = 25°C 0.003 Curves must be derated linearly with increase in temperature. 0.001 1 3 10 30 Collector current IC (A) VCEO max 100 300 1000 Collector-emitter voltage VCE (V) 4 2005-02-01 2SC5548 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2005-02-01