2SC5550

2SC5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System Unit: mm • • • Suitable for RCC circuit (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA) High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A) High breakdown voltage: VCEO = 400 V Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 400 400 7 1 2 0.5 1.5 10 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-8H1A Weight: 0.82 g (typ.) 1 2004-07-26 2SC5550 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr 20 µs IB1 Test Condition VCB = 320 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.04 A IC = 0.2 A, IB = 25 mA IC = 0.2 A, IB = 25 mA Min ― ― 400 400 13 20 ― ― Typ. ― ― ― ― ― ― ― ― Max 100 100 ― ― ― 65 1.0 1.3 V V Unit µA µA V V IC Input IB2 IB1 IB2 Switching time 833 Ω Rise time VCC ≈ 200 V ― ― 0.5 Storage time tstg Output ― ― 5.0 µs Fall time tf IB1 = 0.03 A, IB2 = −0.06 A, Duty cycle ≤ 1% ― ― 0.3 Marking Lot No. C5550 A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) 2 2004-07-26 2SC5550 IC – VCE 2 1400 1200 1000 800 300 hFE – IC Common emitter VCE = 5 V hFE IC (A) 1.6 600 400 100 100 25 Tc = −55°C DC current gain 1.2 200 0.8 100 50 0.4 IB = 20 mA Common emitter Tc = 25°C 0 0 2 4 6 8 10 12 30 Collector current 10 3 1 0.001 0.003 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Collector-emitter voltage VCE (V) VCE (sat) – IC 10 Common emitter 30 VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Common emitter IC/IB = 8 10 Collector-emitter saturation voltage VCE (sat) (V) IC/IB = 8 8 −55 6 Tc = 100°C 25 3 Tc = −55°C 25 100 0.3 1 4 2 0.1 0.001 0 0 0.2 0.4 0.6 0.8 0.003 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Collector current IC (A) VCE (sat) – IC 10 Common emitter VBE (sat) – IC 30 Collector-emitter saturation voltage VCE (sat) (V) IC/IB = 2 8 Base-emitter saturation voltage VBE (sat) (V) Common emitter IC/IB = 2 6 Tc = 100°C 25 10 3 Tc = −55°C 100 0.3 25 4 1 2 −55 0 0 0.4 0.8 1.2 1.6 2 0.1 0.001 0.003 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Collector current IC (A) 3 2004-07-26 2SC5550 IC – VBE 2 Common emitter VCE = 5 V 1.6 3 10 Safe Operating Area IC (A) IC max (pulsed)* IC max (continuous) 10 µs* 100 µs* 1.2 1 Collector current IC (A) 0.8 100 0.4 Tc = −55°C 25 0.3 1 ms* 10 ms* Collector current 0.1 100 ms* DC operation Tc = 25°C 0.03 0 0 0.4 0.8 1.2 1.6 2 2.4 Base-emitter voltage VBE (V) 0.01 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 3 10 30 0.003 VCEO max 100 300 1000 0.001 1 Collector-emitter voltage VCE (V) 4 2004-07-26 2SC5550 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-26