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2SC6040(TPF2,Q,M)

2SC6040(TPF2,Q,M)

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

    SC71-3

  • 描述:

    TRANSNPN1A800VSC71

  • 数据手册
  • 价格&库存
2SC6040(TPF2,Q,M) 数据手册
2SC6040 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High-speed switching: tf = 0.2 μs (max) (IC = 0.3 A) • High breakdown voltage: VCES = 800 V, VCEO = 410 V Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCES 800 V Collector-emitter voltage VCEO 410 V Emitter-base voltage VEBO 8 V DC IC 1.0 Pulse ICP 2.0 IB 0.5 A PC 1.0 W Tj 150 °C Tstg −55 to 150 °C Collector current Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature range 1. Base 2. Collector 3. Emitter A JEDEC ― JEITA ― TOSHIBA 2-7D101A Weight: 0.2 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 2SC6040 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 800 V, IE = 0 ― ― 100 μA Emitter cut-off current IEBO VEB = 8 V, IC = 0 ― ― 100 μA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IB = 0 800 ― ― V Collector-emitter breakdown voltage V (BR) CEO V IC = 10 mA, IB = 0 410 ― ― hFE (1) VCE = 5 V, IC = 1 mA 50 ― ― hFE (2) VCE = 5 V, IC = 0.1 A 60 ― 120 hFE (3) VCE = 5 V, IC = 0.2 A 50 ― ― Collector emitter saturation voltage VCE (sat) IC = 0.8 A, IB = 0.1 A ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 0.8 A, IB = 0.1 A ― ― 1.3 V ― ― 0.5 ― ― 4.0 ― ― 0.2 VCC ≈ 200 V 20 μs tr IB1 Rise time IB2 Switching time Storage time tstg INPUT IB1 IC IB21 667 Ω DC current gain OUTPUT μs IB1 = 0.1 A, −IB2 = 50 mA Fall time tf DUTY CYCLE ≤ 1% Marking C6040 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-13 2SC6040 IC – VCE IC – VCE 2.0 Common emitter Ta=25℃ Pulse test 150 100 1.2 80 60 40 0.8 20 0.4 IB = 10 mA 0 0 0.4 0.8 1.2 1.6 Collector−emitter voltage 2.0 1.6 100 80 IC 150 Collector current Collector current (A) 1.6 200 200 IC (A) 2.0 60 1.2 40 0.8 20 IB = 10 mA 0.4 Common emitter Ta=25℃ Pulse test 0 0 2.4 2 4 VCE (V) hFE – IC Ta = 100°C 100 25 −25 10 1 0.001 0.01 0.1 Collector current 1 12 IC 1 25 −25 0.1 Ta = 100°C 0.01 0.001 10 0.01 0.1 Collector current (A) 1 IC 10 (A) IC – VBE 2.0 1.6 Common emitter VCE = 5 V Pulse test IC (A) Common emitter β =8 Pulse test 1 Ta = −25°C Collector current Base−emitter saturation voltage VBE (sat) (V) 10 VCE (V) Common emitter β= 8 Pulse test VBE (sat) – IC 10 8 VCE (sat) – IC 10 Common emitter VCE = 5 V Pulse test Collector−emitter saturation voltage VCE (sat) (V) DC current gain hFE 1000 6 Collector−emitter voltage 100 25 0.1 0.001 0.01 0.1 Collector current 1 IC 1.2 0.8 Ta = 100°C −25 0.4 25 10 0 0 (A) 0.4 0.8 Base-emitter voltage 3 1.2 VBE 1.6 (V) 2006-11-13 2SC6040 rth – tw rth (°C/W) 1000 Transient thermal resistance 100 10 1 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area PC – Ta 10 IC max (Pulse)* (A) 10 μs* 10 ms* IC Collector current Collector power dissipation 100 μs* 100 ms* 1 PC (W) 1.2 1 ms* 0.1 DC operation Ta = 25°C 0.01 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 Ambient temperature *:Single nonrepetitive pulse 160 Ta 200 (°C) Ta = 25°C Curves must be linearly with increase derated in VCEO max temperature. 0.001 1 10 Collector−emitter voltage 100 1000 VCE (V) 4 2006-11-13 2SC6040 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-13
2SC6040(TPF2,Q,M) 价格&库存

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