2SC6135,LF

2SC6135 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6135 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm 2.1±0.1 Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) • High-speed switching: tf = 85 ns (typ.) +0.1 0.3 -0.05 • 1 3 2 0.166±0.05 High DC current gain: hFE = 400 to 1000 (IC = 0.1A) 0.65±0.05 • 2.0±0.1 1.7±0.1 Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEX 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V DC IC 1.0 Pulse ICP 2.0 IB 0.1 Collector current Base current Collector power dissipation Junction temperature Storage temperature range PC (Note 1) 800 PC (Note 2) 500 A A mW 0.7±0.05 Absolute Maximum Ratings (Ta = 25°C) 1: Base 2: Emitter 3: Collector UFM JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Tj 150 °C Tstg -55 to 150 °C Note 1: Mounted on ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 ) Note 2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 ) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2007-08 © 2009-2017 Toshiba Electronic Devices & Storage Corporation 1 2017-07-31 2SC6135 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 A ― ― 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 A ― ― 100 nA V (BR) CEO IC = 10 mA, IB = 0 A 50 ― ― V hFE (1) VCE = 2 V, IC = 0.1 A 400 ― 1000 hFE (2) VCE = 2 V, IC = 0.3 A 200 ― ― Collector-emitter breakdown voltage DC current gain － Collector-emitter saturation voltage VCE (sat) IC = 300 mA, IB = 6 mA ― ― 0.12 V Base-emitter saturation voltage VBE (sat) IC = 300 mA, IB = 6 mA ― ― 1.10 V VCB = 10 V, IE = 0 A, f = 1 MHz ― 5 ― pF See Figure 1. VCC ≈ 30 V, RL = 100 Ω IB1 = -IB2 = 10 mA ― 35 ― ― 680 ― ― 85 ― Collector output capacitance Switching time Cob Rise time tr Storage time tstg Fall time tf ns Marking VCC Part No. (or abbreviation code) IB1 Input IB1 RL 20 μs ＣＦＡ Output IB2 IB2 Duty cycle < 1% Figure 1 : Switching Time Test Circuit & Timing Chart © 2009-2017 Toshiba Electronic Devices & Storage Corporation 2 2017-07-31 2SC6135 IC – VCE 1 hFE – IC 15 20 10000 10 6 4 0.6 2 0.4 IB = 1 mA DC current gain hFE Collector current IC (A) 8 0.8 Ta = 100°C 1000 25 20 100 Common emitter 0.2 -55 Ta = 25°C Single nonrepetitive pulse 0 0 0 0.2 0.4 0.6 0.8 Collector-emitter voltage 1 Common emitter VCE = 2 V 1.2 Single nonrepetitive pulse 10 0.001 0.003 0.01 0.03 VCE (V) Collector current Common emitter IC/IB = 50 0.3 Single nonrepetitive pulse 0.1 Ta = 100°C 0.03 25 0.01 0.001 0.003 0.01 0.03 Collector current IC 0.3 1 0.3 1 (A) VBE (sat) – IC 10 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) VCE (sat) – IC 1 0.1 -55 0.1 IC 0.3 1 (A) Common emitter IC/IB = 50 3 Single nonrepetitive pulse 25 1 Ta = 100°C 0.3 0.1 0.001 -55 0.003 0.01 0.03 Collector current 0.1 IC (A) IC – VBE 1.0 Common emitter Collector current IC (A) VCE = 2 V 0.8 Single nonrepetitive pulse 0.6 0.4 Ta = 100°C 25 0.2 0 0 0.2 0.4 0.6 0.8 -55 1.0 1.2 Base-emitter voltage VBE (V) © 2009-2017 Toshiba Electronic Devices & Storage Corporation 3 2017-07-31 2SC6135 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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