2SD1223(TE16L1,NQ)

2SD1223 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) 2SD1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) • Complementary to 2SB908. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 4 A Base current IB 0.4 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.0 15 W Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit COLLECTOR BASE ≈ 4.5 kΩ ≈ 300 Ω EMITTER Start of commercial production 1981-09 1 2013-11-01 2SD1223 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ― ― 20 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 2.5 mA V (BR) CEO IC = 10 mA, IB = 0 80 ― ― V hFE (1) VCE = 2 V, IC = 1 A 2000 ― ― hFE (2) VCE = 2 V, IC = 3 A 1000 ― ― Collector-emitter saturation voltage VCE (sat) IC = 3 A, IB = 6 mA ― ― 1.5 V Base-emitter saturation voltage VBE (sat) IC = 3 A, IB = 6 mA ― ― 2.0 V ― 0.2 ― ― 1.5 ― ― 0.6 ― DC current gain ton Storage time tstg 20 μs IB1 Turn-on time Switching time OUTPUT IB1 INPUT IB2 10 Ω Collector-emitter breakdown voltage IB2 μs VCC = 30 V Fall time tf IB1 = −IB2 = 6 mA, DUTY CYCLE ≤ 1% Marking D1223 Part No. (or abbreviation code) Lot No. Note 1 Note 1: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 2SD1223 IC – VCE IC – VCE 4 4 Common emitter Common emitter Tc = 100°C 500 (A) 450 3 400 Collector current IC Collector current IC (A) Tc = 25°C 350 2 300 250 1 3 300 250 200 2 175 150 1 IB = 125 μA IB = 200 μA 0 0 0 1 2 3 Collector-emitter voltage 4 0 0 5 VCE (V) 0 1 2 3 Collector-emitter voltage IC – VCE VCE (V) IC – VBE 4 4 Common emitter Common emitter (A) VCE = 2 V 3 800 Collector current IC Collector current IC (A) Tc = −55°C 700 2 600 500 1 0 0 IB = 400 μA 0 1 2 3 Collector-emitter voltage 4 3 2 Tc = 100°C 0.8 1.6 4.0 3.2 VBE (V) VCE (sat) – IC 3 Collector-emitter saturation voltage VCE (sat) (V) DC current gain hFE 2.4 Base-emitter voltage VCE (V) hFE – IC Tc = 100°C 25 3000 −55 1000 Common emitter 500 VCE = 2 V 300 0.1 25 −55 1 0 0 5 10000 5000 5 4 0.3 1 Collector current IC 3 10 (A) 1 0.5 0.3 0.2 Tc = −55°C 25 100 Common emitter IC/IB = 500 0.5 1 Collector current IC 3 3 5 (A) 2013-11-01 2SD1223 Common emitter IC/IB = 500 3 Tc = −55°C 25 100 1 0.5 0.3 1 3 Collector current IC 5 PC (W) Base-emitter saturation voltage VBE (sat) (V) 5 PC – Ta 16 Collector power dissipation VBE (sat) – IC 12 (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 8 4 (2) (3) 0 0 (A) (1) Tc = Ta infinite heat sink (1) 40 80 120 160 200 240 Ambient temperature Ta (°C) Safe Operating Area 10 IC max (pulsed)* Collector current IC (A) 5 3 IC max (continuous) 1 ms* 10 ms* 1 DC operation (Tc = 25°C) 0.5 0.3 *: Single nonrepetitive pulse 0.1 Tc = 25°C Curves must be derated linearly VCEO max 0.05 with increase in temperature. 0.03 1 3 10 Collector-emitter voltage 30 100 VCE (V) 4 2013-11-01 2SD1223 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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