2SD1947A_06

2SD1947A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD1947A High-Current Switching Applications Lamp, Solenoid Drive Applications Unit: mm • • High DC current gain: hFE = 500 to 1500 (IC = 1 A) Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 100 100 7 10 15 2 2.0 40 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base Emitter 1 2006-11-21 2SD1947A Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter forward voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VECF fT Cob Test Condition VCB = 100 V, IE = 0 VEB = 7 V, IC = 0 IC = 50 mA, IB = 0 VCE = 1 V, IC = 1 A VCE = 1 V, IC = 5 A IC = 5 A, IB = 0.05 A IC = 5 A, IB = 0.05 A IE = 5 A , IB = 0 VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Output 6Ω Input Switching time Storage time tstg IB1 20 μ s IB1 IB2 IB2 VCC = 30 V ― IB1 = −IB2 = 0.05 A, duty cycle ≤ 1% 1.0 ― ― 6.0 ― μs Min ― ― 100 500 150 ― ― ― ― ― Typ. ― ― ― ― ― ― ― ― 70 160 Max 10 10 ― 1500 ― 0.3 1.2 2.0 ― ― V V V MHz pF Unit μA μA V Turn-on time ton ― 0.5 ― Fall time tf Marking D1947A Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 2SD1947A IC – VCE 16 80 60 50 30 40 Common emitter Tc = 25°C 1.2 IB = 5 mA 10 0.8 20 VCE – IC Common emitter Tc = 25°C 40 60 80 150 VCE (V) Collector-emitter voltage 1.0 (A) 12 20 15 Collector current IC 100 0.6 200 0.4 300 0.2 8 10 6 4 4 IB = 2 mA 0 0 0 4 8 12 16 20 0 0 2 4 6 8 10 12 14 16 Collector-emitter voltage VCE (V) Collector current IC (A) VCE – IC 1.2 Common emitter 1.2 IB = 5 mA 10 0.8 20 40 60 80 Ta = 100°C 150 200 IB = 5 mA 10 0.8 20 VCE – IC Common emitter Tc = −55°C 40 60 80 150 VCE (V) 1.0 VCE (V) Collector-emitter voltage 1.0 Collector-emitter voltage 0.6 100 0.6 100 0.4 300 0.4 200 300 0.2 0.2 0 0 ) 2 4 6 8 10 12 14 16 0 0 2 4 6 8 10 12 14 16 Collector current IC (A) Collector current IC (A) VCE (sat) – IC hFE – IC 3000 3 Common emitter Collector-emitter saturation voltage VCE (sat) (V) Common emitter 1000 500 −55 300 Tc = 100°C 25 VCE = 1 V IC/IB = 100 1 0.5 0.3 Tc = 100°C 0.1 0.05 0.03 −55 25 DC current gain hFE 100 50 30 0.1 0.3 0.5 1 3 5 10 30 0.1 0.3 0.5 1 3 5 10 30 Collector current IC (A) Collector current IC (A) 3 2006-11-21 2SD1947A VBE (sat) – IC 10 Common emitter 16 IC/IB = 100 IC – VBE Common emitter VCE = 1 V Base-emitter saturation voltage VBE (sat) (V) 5 3 (A) Tc = −55°C 12 1 0.5 0.3 Collector current IC 8 100 25 4 Tc = 100°C 25 −55 0.1 0.1 0.3 0.5 1 3 5 10 30 0 0 0.4 0.8 1.2 1.6 2.0 Collector current IC (A) Base-emitter voltage VBE (V) rth – tw 100 Transient thermal resistance rth (°C/W) Curves should be applied in thermal limited area. 30 (single nonrepetitive pulse) (1) Infinite heat sink (Tc = 25°C) (2) No heat sink 10 (2) 3 (1) 1 0.3 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area 30 IC max (pulsed)* 10 100 ms* IC max (continuous) 10 ms* 1 m s* 100 μs* (A) 5 3 Collector current IC 1 0.5 0.3 DC operation Tc = 25°C *: Single nonrepetitive pulse Tc = 25°C Curves must be derated 0.1 linearly with increase in temperature. 0.05 1 3 5 10 VCEO max 30 50 100 300 Collector-emitter voltage VCE (V) 4 2006-11-21 2SD1947A RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-21