2SD2092

2SD2092 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2092 Switching Applications Lamp, Solenoid Drive Applications Unit: mm • • High DC current gain: hFE (1) = 500 to 1500 Low collector saturation voltage: VCE (sat) = 0.3 V (max) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 100 100 7 3 5 1 2.0 25 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― SC-67 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base Emitter 1 2006-11-21 2SD2092 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter forward voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VECF fT Cob Test Condition VCB = 100 V, IE = 0 VEB = 7 V, IC = 0 IC = 50 mA, IB = 0 VCE = 1 V, IC = 0.5 A VCE = 1 V, IC = 1 A IC = 1 A, IB = 10 mA IC = 1 A, IB = 10 mA IE = 1 A , IB = 0 VCE = 5 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Output 30 Ω Input Switching time Storage time tstg IB1 20 μ s IB1 IB2 IB2 VCC = 30 V ― IB1 = −IB2 = 10 mA, duty cycle ≤ 1% 0.7 ― Min ― ― 100 500 150 ― ― ― ― ― Typ. ― ― ― ― ― ― ― ― 140 30 Max 10 10 ― 1500 ― 0.3 1.2 2.0 ― ― V V V MHz pF Unit μA μA V Turn-on time ton ― 0.5 ― ― 5 ― μs Fall time tf Marking D2092 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 2SD2092 IC – VCE 1.2 2.8 20 2.4 2.0 1.6 1.2 0.8 0.4 0 0 2 10 4 Common emitter Tc = 25°C IB = 0.5 mA 2 0.8 4 VCE – IC Common emitter Tc = 25°C 10 14 20 VCE (V) Collector-emitter voltage 1.0 Collector current IC (A) 1.4 1 0.5 IB = 0.2 mA 0 2 4 6 8 10 12 14 16 18 0.6 30 0.4 40 80 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Collector-emitter voltage VCE (V) Collector current IC (A) VCE – IC 1.2 Common emitter 1.2 IB = 0.5 mA 2 0.8 4 10 14 Tc = 100°C 20 30 IB = 0.5 mA 2 0.8 VCE – IC Common emitter Tc = −55°C 4 10 14 20 VCE (V) 1.0 VCE (V) Collector-emitter voltage 40 1.0 Collector-emitter voltage 0.6 0.6 30 0.4 40 0.2 80 0.4 80 0.2 0 0 ) 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Collector current IC (A) Collector current IC (A) hFE – IC 3000 3000 Tc = 100°C hFE – IC Common emitter VCE = 1 V DC current gain hFE DC current gain hFE 1000 500 300 2 1 VCE = 5 V 1000 500 300 25 −55 100 Common emitter Tc = 25°C 0.1 0.3 0.5 1 3 100 50 0.05 50 0.05 5 10 0.1 0.3 0.5 1 3 5 10 Collector current IC (A) Collector current IC (A) 3 2006-11-21 2SD2092 VCE (sat) – IC Common emitter VBE (sat) – IC (V) 5 Common emitter 3 IC/IB = 100 3 1 0.5 0.3 Tc = 100°C 25 0.1 0.05 0.03 0.05 0.1 0.3 0.5 1 3 5 10 −55 Base-emitter saturation voltage VBE (sat) Collector-emitter saturation voltage VCE (sat) (V) IC/IB = 100 1 Tc = −55°C 25 100 0.5 0.3 0.1 0.05 0.1 0.3 0.5 1 3 Collector current IC (A) Collector current IC (A) IC – VBE 3.0 Common emitter 2.5 VCE = 1 V 5 3 10 Safe Operating Area IC max (pulsed)* IC max (continuous) 100 μs* 1 ms* (A) Collector current IC 2.0 1.5 Tc = 100°C 1.0 25 −55 (A) 10 ms* 1 100 ms* Collector current IC 0.5 0.3 DC operation Tc = 25°C 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 5 10 30 Base-emitter voltage VBE (V) 0.05 0.03 2 VCEO max 50 100 200 Collector-emitter voltage VCE (V) rth – tw 100 Curves should be applied in thermal limited area. (2) Transient thermal resistance rth (°C/W) 30 (Ｓingle nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 10 (1) 3 1 0.3 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) 4 2006-11-21 2SD2092 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-21