2SD2241
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SD2241
Switching Applications
Unit: mm • • • High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max) Complementary to 2SB1481
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 100 100 5 ±4 ±6 0.3 2.0 25 150 −55 to 150 Unit V V V A A W °C °C
JEDEC JEITA TOSHIBA
― SC-67 2-10R1A
Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector
Base ≈ 4.5 kΩ ≈ 300 Ω Emitter
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2SD2241
Electrical Characteristics (Tc = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-collector forward voltage Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VECF ton Input Switching time Storage time tstg IB1 20 μ s Test Condition VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 1.5 A VCE = 2 V, IC = 3 A IC = 3 A , I B = 6 m A IC = 3 A , I B = 6 m A IE = 1 A , I B = 0 Output 10 Ω Min ― ― 100 2000 1000 ― ― ― ― Typ. ― ― ― ― ― ― ― ― 0.2 Max 20 2.5 ― ― ― 1.5 2.0 2.0 ― V V V Unit μA mA V
IB1 IB2
―
1.5
―
μs
IB2
VCC ≈ 30 V ― 0.6 ―
Fall time
tf IB1 = −IB2 = 6 mA, duty cycle ≤ 1%
Marking
D2241
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SD2241
IC – VCE
5 Common emitter Tc = 25°C 4 500 3 450 400 350 300 1 250 IB = 200 μA 0 0 1 2 3 4 5 6 0 0 0.8 4
IC – VBE
Common emitter VCE = 2 V
(A)
(A) Collector current IC
3
Collector current IC
2 Tc = 100°C 1 25 −55
2
1.6
2.4
3.2
4.0
Collector-emitter voltage
VCE (V)
Base-emitter voltage
VBE (V)
hFE – IC
Collector-emitter saturation voltage VCE (sat) (V)
10000 5
VCE (sat) – IC
Common emitter 3 IC/IB = 500
DC current gain hFE
5000 3000
Tc = 100°C 25
−55 1000 Common emitter VCE = 2 V 300 0.1 0.3 0.5 1 3 5 10
1 25
Tc = −55°C
100 0.5 0.3 0.1
)
500
0.3
0.5
1
3
5
Collector current IC
(A)
Collector current IC
(A)
Safe Operating Area
10 IC max (pulsed)* 5 100 μs* 1 ms* 10 ms* 100 ms*
10
Base-emitter saturation voltage VBE (sat) (V)
Collector current IC
Common emitter 5 3 Tc = −55°C 25 1 100 IC/IB = 500
(A)
VBE (sat) – IC
3 IC max (continuous)
1 0.5 0.3
0.1
*: Single nonrepetitive pulse Tc = 25°C
Curves must be derated linearly with 0.05 increase in temperature. 1 3 5 0.03 0.3 1 3 10
0.5 0.1
VCEO max 30 100
0.3
0.5
Collector current IC
(A)
Collector-emitter voltage
VCE (V)
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2SD2241
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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